Evaluation of the Si-SiO_2 Interface by the Measurement of the Surface Recombination Velocity S by the Dual-Mercury Probe Method
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-12-20
著者
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ISHII Kenichi
Electrotechnical Laboratory
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HAYASHI Yutaka
Electrotechnical Laboratory
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Hayashi Y
Hadepartment Of Environmental Technology And Urban Planning Nagoya Institute Of Technology
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Hayashi Y
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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TAKATO Hidetaka
National Institute of Advanced Industrial Science and Technology (AIST)
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SUZUKI Eiichi
Electron Devices Division, Electrotechnical Laboratory
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Ishii K
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Suzuki E
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Hayashi Yasuaki
Institute For Super Materials Ulvac Japan Ltd.
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TAKATO Hidetaka
Electrotechnical Laboratory
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Ishii Ken'ichi
Electrotechnical Laboratory
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Hayashi Y
Univ. Tsukuba Ibaraki Jpn
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Takato H
National Institute Of Advanced Industrial Science And Technology (aist)
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