Photoluminescence of Eu-Doped ZnO Phosphors

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概要

• 論文の詳細を見る

• Characteristic 4f photoluminescence of Eu^<3+> doped into ZnO was first observed on the red band luminescence. The intensity and fine structures of the Eu^<3+> luminescence and their temperature dependence are strongly influenced by the doping conditions. In particular, for the increase of the Eu^<3+> luminescence intensity Li codoping is not effective but stoichiometric control of Zn and Ois essential. Moreover, the observed red band luminescence can be considered to be due to excess oxygen.

• 社団法人応用物理学会の論文
• 1995-04-15

著者

• Uchida T

  Institute For Semiconductor Technologies Ulvac Inc.

• Uchida Tajiro

  Institute For Semiconductor Technologies Ulvac Inc.

• Noguchi Toru

  Department of Lipidology, Kanazawa University Graduate School of Medical Science

• Hayashi Y

  Research Laboratory Of Resources Utilization Tokyo Institute Of Technology

• IBUKI Sumiaki

  Department of Electrical Engineering, Faculty of Engineering, Setsunan University

• Hayashi Yasufumi

  Department Of Electrical Engineering Faculty Of Engineering Setsunan University

• Ibuki Sumiaki

  Department Of Electrical Engineering Faculty Of Engineering Setsunan University

• Hayashi Y

  Univ. Tsukuba Ibaraki Jpn

• UCHIDA Teruo

  Department of Applied Physics, Faculty of Engineering, Osaka University

• Narahara Hidetoshi

  Department of Electrical Engineering, Faculty of Engineering, Setsunan University

• Narahara Hidetoshi

  Department Of Electrical Engineering Faculty Of Engineering Setsunan University

• Noguchi Toru

  Department Of Electrical Engineering Faculty Of Engineering Setsunan University

• Uchida Teruo

  Department Of Applied Physics Faculty Of Engineering Osaka University

• Uchida Teruo

  Department Of Electrical Engineering Faculty Of Engineering Setsunan University

• Noguchi Toru

  Department of Chemistry, Faculty of Education, Saga University

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