Characterization of High-Effciency Cast-Si Solar Cell Wafers by MBIC Measurement : Optical Properties of Condensed Matter
スポンサーリンク
概要
- 論文の詳細を見る
Cast-Si wafers for high-effciency solar cells were characterized by MBIC measurement, in which the minority-carrier recombination loss at structural defects were seen as a drop in intensity. Cast-Si wafers contained a large number of non-planer and irregular grain boundaries, the majority if which had the electrical activity greatly due to a slight difference in the crystal orientation. These boundaries were classified into three geometrical structures, that is, columnar-structure grain boundary (GB), tilt-structure GB and GB structure with a transition interface layer. Other dominant defects were planar boundaries, {111} twin boundaries, {221} second-order twin boundaries and {221} planar boundaries without a twinning relationship (symmetric twist boundaries) which were found to be electrically inactive and were mainly observed in the high-quality wafers. Besides, the boundary structures off the twinning relationship. fine-crystalline structures and subgrain boundary structures were found to have remarkable electrical activity.
- 社団法人応用物理学会の論文
- 1988-05-20
著者
関連論文
- Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films
- Low-Temperature Pretreatment in Chemical Vapor Deposition of a Silicon Film for Solid-Phase Epitaxial Growth : Techniques, Instrumentations and Measurement
- Accumulation-Mode GaAlAs/GaAs Bipolar Transistor
- High-Temperature Operation of Silicon Carbide MOSFET
- Effects of Optical Confinement in Textured Antireflection Coating using ZnO Films for Solar Cells
- Evaluation of the Si-SiO_2 Interface by the Measurement of the Surface Recombination Velocity S by the Dual-Mercury Probe Method
- Hydrogen Annealing of Transparent Gate MOS Diodes
- A Low-Voltatge Alterable Metal-Oxide-Nitride-Oxide-Semiconductor Memory with Nano-Meter Thick Gate Insulators (NM-MONOS) : LATE NEWS
- Measurement of the Minority-Carrier Lifetime in a Semiconductor Wafer by a Two-Mercury-Probe Method and Its Application to Evaluation of the Surface Recombination Velocity
- pnp-Type GaAs Inversion-Base Bipolar Transistor (pnp-type GaAs IBT)
- Integration of a GaAs SISFET and GaAs Inversion-Base Bipolar Transistor : Special Section : Solid State Devices and Materials 2 : III-V Compound Semiconductors Devices and Materials
- Simple Analytical Methods for Determining Optical Constants of Thin Films : Their Application to Amorphous Silicon
- Solar Cell Characteristics of High-Efficiency Polycrystalline Silicon Solar Cells Using SOG-Cast Wafers
- The Growth of Single Domain GaAs Films on Double Domain Si(001) Substrates by Molecular Beam Epitaxy
- Development of High Efficiency Polycrystalline Silicon Solar Cells Using Solar Grade Cast Wafers
- Formation of Zn-O Complexes During the Molecular Beam Epitaxial Growth of GaP on Si
- Effect of Semiconductor Thickness on Capacitance-Voltage Characteristics of an MOS Capacitor
- Two-Dimensional Electron Gas in an n^+-GaAs/Undoped AlGaAs/Undoped GaAs SIS Structure
- Doping Profile Measurement of a Bonded Silicon-on-Insulator Wafer by Capacitance-Voltage Measurements
- Carrier Injection into SiO_2 from Si Surface Driven to Avalanche Breakdown by a Linear Ramp Pulse, and Trapping, Distribution and Thermal Annealing of Injected Holes in SiO_2
- Injection, Trapping and Release from SiO_2 of Photo-Generated Hole Charge for an Erasable Non-Volatile Optical Memory
- Minority Carrier Lifetime Measurement in HF Solution to Evaluate Si Substrates for Solar Cells
- Characteristics of Three-μm-Thick Silicon Solar Cells Using Bonded Silicon-on-Insulator Wafer
- GaAs Inversion-Base Bipolar Transistor (GaAs IBT) with Graded Emitter Barrier : Semiconductors and Semiconductor Devices
- Effect of Localized Recombination Planes on Minority-Carrier Diffusion Length in Silicon Solar Cells
- Bias Light Wavelength Dependence of Minority Carrier Diffusion Length of EFG Silicon Ribbon Solar Cells
- Sub-5μm Thin Film Crystalline Silicon Solar Cell on Alumina Ceramic Substrate
- Characterization of High-Effciency Cast-Si Solar Cell Wafers by MBIC Measurement : Optical Properties of Condensed Matter
- Photon Collection Enhancement by White Rear Cover Reflection and the Design of Reference Cells for Module Performance Measurement