A Low-Voltatge Alterable Metal-Oxide-Nitride-Oxide-Semiconductor Memory with Nano-Meter Thick Gate Insulators (NM-MONOS) : LATE NEWS
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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ISHII Kenichi
Electrotechnical Laboratory
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HAYASHI Yutaka
Electrotechnical Laboratory
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Hayashi Y
Research Laboratory Of Resources Utilization Tokyo Institute Of Technology
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SUZUKI Eiichi
Electron Devices Division, Electrotechnical Laboratory
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Ishii K
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Suzuki E
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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HIRAISHI Hisato
Electrotechnical Laboratory
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Ishii Ken'ichi
Electrotechnical Laboratory
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Hayashi Y
Univ. Tsukuba Ibaraki Jpn
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