Demonstration and Analysis of Accumulation-Mode Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
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概要
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The property of an accumulation-mode double-gate (DG) metal–oxide–semiconductor field-effect transistor (MOSFET) has thoroughly been investigated on the basis of experimental data and simulation results. Both accumulation- and inversion-mode DG-MOSFETs have been fabricated by novel vertical DG-MOSFET fabrication process technology. It is experimentally demonstrated that accumulation-mode DG-MOSFETs show a severe influence of channel thickness ($T_{\text{Si}}$) on threshold voltage ($V_{\text{th}}$) and subthreshold slope ($S$) as compared with inversion-mode ones. By decreasing $T_{\text{Si}}$, however, $S$ is dramatically improved to the same value as that for the inversion-mode one. The short-channel effects (SCEs) for the accumulation-mode DG-MOSFETs have been explored using device simulation. The simulation result shows that, by decreasing $T_{\text{Si}}$ to 10 nm, the trend of the SCEs for the accumulation-mode DG-MOSFETs becomes the same as that for the inversion-mode one down to an effective gate length of 10 nm. It is also demonstrated that, by using n+-DGs, an appropriate $V_{\text{th}}$ as well as a low $S$ can be attained for an accumulation-mode PMOS vertical DG-MOSFET.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Masahara Meishoku
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Matsukawa Takashi
Nanoelectronics Research Institute Aist
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Ishii Kenichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Endo Kazuhiko
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Masahara Meishoku
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Suzuki Eiichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Sugimata Etsuro
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ishii Kenichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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