Spin-polarized Tunneling in Ultrasmall Vertical Ferromagnetic Tunnel Junctions
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概要
- 論文の詳細を見る
We have developed nanometer-scale vertical ferromagnetic tunnel junctions using a Si-based inorganic electron beam resist process, including barrier layer fabrication using metal evaporation in ozone atmosphere. The current–voltage ($I$–$V$) characteristics of Ni/NiO/Co multiple junctions with diameters of 20 nm have been measured in a magnetic field to investigate spin-polarized tunneling in the Coulomb blockade regime. The temperature dependence of the $I$–$V$ curve indicates that Coulomb blockade phenomena occur at temperatures below 40 K, agreeing with the estimation of the single-electron charging energy from the device geometries. The magnetoresistance is strongly enhanced by magnetization reversal of Ni and Co, and the obtained MR ratio is greater than 100% in the Coulomb blockade regime at 15 K.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-09-15
著者
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WADA Toshimi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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HIKOSAKA Kazunori
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Haraichi Satoshi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ishii Kenichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Haraichi Satoshi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Hikosaka Kazunori
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Wada Toshimi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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