Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates

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概要

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• We have investigated dual-work-function metal gates based on Mo and stacked Ta/Mo fabricated by an interdiffusion method that does not require a metal etching process from the gate dielectrics. The diffusion of Ta into the Mo layer provides a markedly reduced work function for the Ta/Mo gate (4.42 eV) in comparison with that for the single Mo gate (5.04 eV). The metal–oxide–semiconductor field-effect transistors (MOSFETs) with the Mo and Ta/Mo gates on 4-nm-thick SiO2 were fabricated by the gate-first process with dopant activation annealing at 850 °C. The Ta/Mo-gate n-MOSFET with the reduced gate work function and the Mo-gate p-MOSFET exhibited almost symmetrical threshold voltages (+0.53/$-0.45$ V). It was also confirmed that the Ta/Mo interdiffusion process did not degrade the gate dielectric integrity and electron mobility in contrast to the case of the single Mo gate.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2008-04-25

著者

• Ishikawa Yuki

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Yamauchi Hiromi

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Masahara Meishoku

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Suzuki Eiichi

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Liu Yongxun

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Tsukada Junichi

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology

• Matsukawa Takashi

  Nanoelectronics Research Institute Aist

• Ishii Kenichi

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)

• Endo Kazuhiko

  Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)

• Tsukada Junichi

  Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Suzuki Eiichi

  Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Endo Kazuhiko

  Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Ishii Kenichi

  Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

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