Electrical Properties of Ruthenium/Metalorganic Chemical Vapor Deposited La-Oxide/Si Field Effect Transistors
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概要
- 論文の詳細を見る
Ruthenium (Ru) is proposed as a gate metal for lanthanide oxide high-$k$ gate dielectric metal-oxide-semiconductor devices. Desirable threshold voltage within $\pm 0.5$ V has been experimentally obtained for the Ru gate/metaolorganic chemical vapor deposited La-oxide dielectric metal-oxide-semiconductor field-effect-transistors (MOSFETs). We have also achieved a high ON/OFF drain current ratio of more than $10^{4}$ in both n-MOSFETs and p-MOSFETs with a low subthreshold-slope. These experimental results show that the proposed Ru/La-oxide MOSFET is promising for future low power ultra large scale integrated circuits.
- Japan Society of Applied Physicsの論文
- 2003-11-01
著者
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Suzuki Eiichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ishii Kenichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Shimizu Takashi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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