Endo Kazuhiko | Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)

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著作論文

Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
FinFET-Based Flex-Vth SRAM Design for Drastic Standby-Leakage-Current Reduction
Demonstration of Dopant Profiling in Ultrathin Channels of Vertical-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect-Transistor by Scanning Nonlinear Dielectric Microscopy
A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
A 0.7-V Opamp in Scaled Low-Standby-Power FinFET Technology
Device Design Consideration for $V_{\text{th}}$-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor
Dual-Metal-Gate Transistors with Symmetrical Threshold Voltages Using Work-Function-Tuned Ta/Mo Bilayer Metal Gates
Ta/Mo Stack Dual Metal Gate Technology Applicable to Gate-First Processes
Demonstration and Analysis of Accumulation-Mode Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
Atomic Layer Deposition of SiO
Atomic Layer Deposition of SiO₂ for the Performance Enhancement of Fin Field Effect Transistors

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