ISHII Kenichi | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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概要
- 同名の論文著者
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technologyの論文著者
関連著者
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ISHII Kenichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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MASAHARA Meishoku
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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MATSUKAWA Takashi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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SUZUKI Eiichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Maeda T
Advanced Industrial Sci. And Technol. Ibaraki Jpn
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SAKAMOTO Kunihiro
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Ishii K
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Nanoelectronics Research Institute Aist
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LIU Yongxun
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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TANOUE Hisao
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Suzuki E
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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YAMAUCHI Hiromi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Yamauchi Hiroshi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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TANII Takashi
School of Science and Engineering, Waseda University
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OHDOMARI Iwao
School of Science and Engineering, Waseda University
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Wada T
Department Of Materials Chemistry Ryukoku University
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Ishikawa Yuki
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Wada Takao
Department Of Electrical And Computer Engineering Nagoya Institute Of Technology
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ENDO Kazuhiko
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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LIU Yongxum
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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TSUKADA Junichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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ENDO Kazuhiko
National Institute of Advanced Industrial Science and Technology
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MASAHARA Meishoku
National Institute of Advanced Industrial Science and Technology
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HARAICHI Satoshi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Yamauchi Hiromi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ishii K
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Kanemaru Seigo
Graduate School Of Science And Engineering Tokyo Institute Of Technology
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Kanemaru Seigo
Tsukuba Laboratory Yaskawa Electric Co. Ltd.
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NAGAO Masayoshi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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HOSOKAWA Shinichi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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Sakamoto Kunihiro
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Masahara Meishoku
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Matsukawa Takashi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Hosokawa Shinichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Suzuki Eiichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Wada T
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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WADA Toshimi
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology
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HIKOSAKA Kazunori
Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology
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Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue H
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Tanoue H
National Institute Of Advanced Industrial Science And Technology (aist)
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Tsukada Junichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Matsukawa Takashi
Nanoelectronics Research Institute Aist
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Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Matsukawa Takashi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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O'uchi Shin-ichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
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Ishii Kenichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Endo Kazuhiko
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
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Suzuki Eiichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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Ishii Kenichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
著作論文
- Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates
- Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)
- P-Channel Vertical Double-Gate MOSFET Fabricated by Utilizing Ion-Bombardment-Retarded Etching Processs
- Novel Process for Vertical Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) Fabrication
- Spin-polarized Tunneling in Ultrasmall Vertical Ferromagnetic Tunnel Junctions