Sekigawa Toshihiro | Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

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概要

関連著者

Sakamoto Kunihiro
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
Masahara Meishoku
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
Sekigawa Toshihiro
Nanoelectronices Research Institute National Institute Of Advanced Science And Technology (aist)
Suzuki Eiichi
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
Liu Yongxun
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology
Matsukawa Takashi
Nanoelectronics Research Institute Aist
Endo Kazuhiko
Nanoelectronics Research Institute National Institute Of Advanced Industrial Science And Technology (aist)
Masahara Meishoku
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Liu Yongxun
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Suzuki Eiichi
Nanoelectronics Research Institute (NeRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
Sekigawa Toshihiro
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

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著作論文

Device Design Consideration for $V_{\text{th}}$-Controllable Four-Terminal Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

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