Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics

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概要

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• Floating-gate (FG)-type fin-channel double-gate (DG) and tri-gate (TG) flash memories with different control-gate (CG) lengths (L_{\text{CG}}) from 76 to 256 nm have successfully been fabricated by using (110)-oriented silicon on insulator (SOI) wafers, and their electrical characteristics have been comparatively investigated. It was experimentally found that better short channel effect (SCE) immunity, smaller threshold voltage (V_{\text{t}}) variations, and a higher program speed are obtained in the TG-type flash memories than in the DG-type memories. The higher performance of the TG-type flash memory is partly due to the additional top gate and recessed buried oxide (BOX) region, which strengthen the controllability of the channel potential and increase the coupling ratio of the FG to CG. Moreover, it was also found that the measured source--drain (SD) breakdown voltage (\mathit{BV}_{\text{DS}}) is higher than 3.2 V even when L_{\text{CG}} was reduced to 76 nm. Therefore, the developed fin-channel TG structure is expected to be very useful for the fabrication of scaled NOR-type flash memory.

• 2012-04-25

著者

• MASAHARA Meishoku

  National Institute of Advanced Industrial Science and Technology

• LIU Yongxun

  National Institute of Advanced Industrial Science and Technology

• MATSUKAWA Takashi

  National Institute of Advanced Industrial Science and Technology

• YAMAUCHI Hiromi

  National Institute of Advanced Industrial Science and Technology

• ISHIKAWA Yuki

  National Institute of Advanced Industrial Science and Technology

• Endo Kazuhiko

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Sakamoto Kunihiro

  National Institute Of Advanced Industrial Science And Technology (aist)

• Ogura Atsushi

  School Of Science And Engineering Meiji University

• Matsukawa Takashi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Tsukada Junichi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Tsukada Junichi

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Hayashida Tetsuro

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Kamei Takahiro

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Masahara Meishoku

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Liu Yongxun

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Ishikawa Yuki

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Endo Kazuhiko

  National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568, Japan

• Hayashida Tetsuro

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

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