Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient

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概要

• 論文の詳細を見る

• Cu oxide has been deoxidized in an extremely low oxygen partial pressure atmosphere. The oxygen was evacuated to $10^{-28}$ atm using a newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200 °C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 2006-04-25

著者

• Ikeda Shin-ichi

  National Institute of Advanced Industrial Science and Technology (AIST)

• SUZUKI Eiichi

  National Institute of Advanced Industrial Science and Technology

• MINO Tetsuya

  National Institute of Advanced Industrial Science and Technology (AIST)

• GOFUKU Eishi

  National Institute of Advanced Industrial Science and Technology (AIST)

• Yoshida Yoshiyuki

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Endo Kazuhiko

  National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn

• Shirakawa Naoki

  National Institute for Materials Science

• Mino Tetsuya

  National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Ikeda Shin-ichi

  National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

• Yoshida Yoshiyuki

  National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan

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