Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
スポンサーリンク
概要
- 論文の詳細を見る
Cu oxide has been deoxidized in an extremely low oxygen partial pressure atmosphere. The oxygen was evacuated to $10^{-28}$ atm using a newly developed oxygen reduction system (ORS). It was experimentally demonstrated that the surface oxide of Cu film was completely removed by exposure to such an environment at 200 °C. The proposed deoxidization reaction can be used as a new Cu surface cleaning technique.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2006-04-25
著者
-
Ikeda Shin-ichi
National Institute of Advanced Industrial Science and Technology (AIST)
-
SUZUKI Eiichi
National Institute of Advanced Industrial Science and Technology
-
MINO Tetsuya
National Institute of Advanced Industrial Science and Technology (AIST)
-
GOFUKU Eishi
National Institute of Advanced Industrial Science and Technology (AIST)
-
Yoshida Yoshiyuki
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
Endo Kazuhiko
National Inst. Advanced Industrial Sci. And Technol. Ibaraki Jpn
-
Shirakawa Naoki
National Institute for Materials Science
-
Mino Tetsuya
National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Ikeda Shin-ichi
National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
-
Yoshida Yoshiyuki
National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
関連論文
- 極低酸素分圧を用いたCu酸化物クリーニング技術(低誘電率層間膜,配線材料及び一般)
- Observation of Softened Fe Modes in K-Doped BaFe_2As_2 via ^Fe Nuclear Resonant Inelastic Scattering
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Fabrication of Four-Terminal Fin Field-Effect Transistors with Asymmetric Gate-Oxide Thickness Using an Anisotropic Oxidation Process with a Neutral Beam
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Fabrication of a Vertical-Channel Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Switching Dynamics of Bi_2Sr_2CaCu_2O_ Intrinsic Josephson Junctions : Macroscopic Quantum Tunneling and Self-Heating Effect(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Low-Leakage-Current Ultra-thin SiO_2 Film by Low-Temperature Neutral Beam Oxidation
- Thermal Variations of Magnetic Excitation Spectrum in Slightly Overdoped Bi_Sr_CaCu_2O_
- Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
- Antiferroquadrupolar Ordering and Anisotropic Magnetic Phase Diagram of Dysprosium Palladium Bronze, DyPd_3S_4(Condensed matter: electronic structure and electrical, magnetic, and optical properties)
- Fabrication of Ultrasmall High-Quality Bi_2Sr_2CaCu_2O_ Intrinsic Josephson Junctions
- Vertical Ultrathin-channel Multi-gate MOSFETs (MuGFETs) : Technological Challenges and Future Developments
- Investigation of N-Channel Triple-Gate MOSFETs on (100) SOI Substrate
- Close Observation of the Geometrical Features of an Ultranarrow Silicon Nanowire Device
- Multi-Junction Switching in Bi_2Sr_La_CuO_ Intrinsic Josephson Junctions
- Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
- A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
- Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
- Fabrication of a Vertical-Channel Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Using a Neutral Beam Etching
- Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
- Investigation of Low-Energy Tilted Ion Implantation for Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Extension Doping
- Observation of Softened Fe Modes in K-Doped BaFe2As2 via 57Fe Nuclear Resonant Inelastic Scattering
- Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication
- Enhancement of Hybridization between Two- and One-Dimensional Bands due to Coulomb and Spin–Orbit Interactions in Sr2RuO4
- Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
- Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
- Thermal Variations of Magnetic Excitation Spectrum in Slightly Overdoped Bi2.1Sr1.9CaCu2O8+δ
- Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
- Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
- Investigation of N-Channel Triple-Gate Metal–Oxide–Semiconductor Field-Effect Transistors on (100) Silicon On Insulator Substrate
- Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography
- Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors
- New Fabrication Technology of Fin Field Effect Transistors Using Neutral-Beam Etching
- Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching
- Low Temperature, Beam-Orientation-Dependent, Lattice-Plane-Independent, and Damage-Free Oxidation for Three-Dimensional Structure by Neutral Beam Oxidation
- 1/f Noise Characteristics of Fin-Type Field-Effect Transistors in Saturation Region
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
- Independent-Double-Gate FinFET SRAM Technology
- Reduction of Moisture in Semiconductor Dry Process Equipment by Generating Extremely Low Oxygen Ambience
- Deoxidization of Cu Oxide under Extremely Low Oxygen Pressure Ambient
- Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)