Measurement of Anisotropic Biaxial Stresses in Si₁₋xGe[x]/Si Mesa Structures by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials)

スポンサーリンク

概要

• 論文の詳細を見る

• Anisotropic biaxial stress states in Si<inf>1-x</inf>Ge<inf>x</inf>/Si mesa structures were evaluated by oil-immersion Raman spectroscopy. Using a high-numerical-aperture lens, the electrical field component perpendicular to the surface, i.e., z-polarization, can be obtained. The z-polarization enables the excitation of the forbidden optical phonon mode, i.e., the transverse optical (TO) phonon mode, even under the backscattering geometry from (001)-oriented diamond-type crystals. The anisotropic biaxial stress evaluation of Si<inf>1-x</inf>Ge<inf>x</inf>was considered difficult compared with that of Si, because many unknown parameters exist for Si<inf>1-x</inf>Ge<inf>x</inf>, e.g., phonon deformation potentials (PDPs), the Ge concentration x, and the factor of Raman shift on x. In this study, PDPs and the Ge concentration in Si<inf>1-x</inf>Ge<inf>x</inf>were investigated in detail. As a result, using precise PDPs and x, a clear dependence of anisotropic biaxial stress states in Si<inf>1-x</inf>Ge<inf>x</inf>on the mesa structure shape was observed.

• 2013-04-25

著者

• Kosemura Daisuke

  School Of Science And Engineering Meiji University

• Ogura Atsushi

  School Of Science And Engineering Meiji University

• Tomita Motohiro

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• USUDA Koji

  Collaborative Research Team Green Nanoelectronics Center, AIST

• Tezuka Tsutomu

  Collaborative Research Team Green Nanoelectronics Center, AIST, Tsukuba, Ibaraki 305-8569, Japan

関連論文

• Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells
• Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal--Oxide--Semiconductor Field-Effect Transistors
• A Comparative Study of Nitrogen Gas Flow Ratio Dependence on the Electrical Characteristics of Sputtered Titanium Nitride Gate Bulk Planar Metal–Oxide–Semiconductor Field-Effect Transistors and Fin-Type Metal–Oxide–Semiconductor Field-Effect Transistors
• Nitrogen Gas Flow Ratio and Rapid Thermal Annealing Temperature Dependences of Sputtered Titanium Nitride Gate Work Function and Their Effect on Device Characteristics
• UV-Raman Spectroscopy System for Local and Global Strain Measurement in Si
• Characterization of Strain in Si for High Performance MOSFETs
• Study of the Degradation of p–n Diode Characteristics Caused by Small-Angle Grain Boundaries in Multi-Crystalline Silicon Substrate for Solar Cells
• Evaluation of Strained-Silicon by Electron Backscattering Pattern Measurement: Comparison Study with UV-Raman Measurement and Edge Force Model Calculation
• Study of Charge Trap Sites in SiN Films by Hard X-ray Photoelectron Spectroscopy
• Evaluation of Anisotropic Strain Relaxation in Strained Silicon-on-Insulator Nanostructure by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials (1))
• Experimental Study of Floating-Gate-Type MetalOxideSemiconductor Capacitors with Nanosize Triangular Cross-Sectional Tunnel Areas for Low Operating Voltage Flash Memory Application (Special Issue : Microprocesses and Nanotechnology)
• Fabrication and Characterization of NOR-Type Tri-Gate Flash Memory with Improved Inter-Poly Dielectric Layer by Rapid Thermal Oxidation (Special Issue : Microprocesses and Nanotechnology)
• Study of Strain Induction for Metal–Oxide–Semiconductor Field-Effect Transistors using Transparent Dummy Gates and Stress Liners
• Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor
• Evaluation of Strain in Si-on-Insulator Substrate Induced by Si3N4 Capping Film
• Two-Dimensional Anisotropic Lattice Deformation Observed in a Commercially Available Strained-Si Wafer
• Investigation of Phonon Deformation Potentials in Si1-xGex by Oil-Immersion Raman Spectroscopy
• Channel Strain Measurement in 32-nm-Node Complementary Metal--Oxide--Semiconductor Field-Effect Transistor by Raman Spectroscopy
• Improvement of Spatial Resolution in Raman Spectroscopy Selecting Measurement Area by Opaque Material Deposition
• Fabrication of Floating-Gate-Type Fin-Channel Double- and Tri-Gate Flash Memories and Comparative Study of Their Electrical Characteristics
• Experimental Comparisons between Tetrakis(dimethylamino)titanium Precursor-Based Atomic-Layer-Deposited and Physical-Vapor-Deposited Titanium--Nitride Gate for High-Performance Fin-Type Metal--Oxide--Semiconductor Field-Effect Transistors
• Evaluation of Anisotropic Biaxial Stress by Raman Spectroscopy with a High Numerical Aperture Immersion Objective Lens
• Combinatorial Investigation of ZrO2-Based Dielectric Materials for Dynamic Random-Access Memory Capacitors
• Tensor Evaluation of Anisotropic Stress Relaxation in Mesa-Shaped SiGe Layer on Si Substrate by Electron Back-Scattering Pattern Measurement: Comparison between Raman Measurement and Finite Element Method Simulation
• Measurement of Anisotropic Biaxial Stresses in Si
• UV-Raman Spectroscopy System for Local and Global Strain Measurements in Si
• Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories
• Investigation of Phonon Deformation Potentials in Si_Ge_x by Oil-Immersion Raman Spectroscopy
• Structure Analyses of Room Temperature Deposited AlO
• Ge
• Gate Structure Dependence of Variability in Polycrystalline Silicon Fin-Channel Flash Memories (Special Issue : Microprocesses and Nanotechnology)
• Measurement of Anisotropic Biaxial Stresses in Si₁₋xGe[x]/Si Mesa Structures by Oil-Immersion Raman Spectroscopy (Special Issue : Solid State Devices and Materials)

もっと見る 閉じる

スポンサーリンク