Evaluation of Anisotropic Biaxial Stress by Raman Spectroscopy with a High Numerical Aperture Immersion Objective Lens
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概要
- 論文の詳細を見る
It is expected to be necessary to measure the stress tensors in Si because the stress field in the channels of metal–oxide–semiconductor field-effect transistors is remarkably complicated. Raman spectroscopy enables us to evaluate the stress precisely, nondestructively, and with relatively high spatial resolution, although its standard implementation fails to resolve the stress tensor. The goal of this study is to establish a procedure for measuring an unknown plane-stress state. In this study, the anisotropic biaxial stress in Si induced by a SiN film was evaluated by Raman spectroscopy with an immersion objective lens with a high numerical aperture.
- 2010-04-25
著者
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Kosemura Daisuke
School Of Science And Engineering Meiji University
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Atsushi Ogura
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Hiroaki Akamatsu
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Takei Munehisa
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Nagata Kohki
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Kohki Nagata
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Munehisa Takei
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
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Ryosuke Shimidzu
PHOTON Design Corporation, 24-6 Kamiya 2-chome, Kita, Tokyo 115-0043, Japan
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