Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory

スポンサーリンク

概要

• 論文の詳細を見る

• In this paper, we describe chemical vapor deposition (CVD) of GeSbTe (GST) films for fabricating phase change memory. A low-carbon-impurity GST film was deposited by CVD. Film composition and structure varied significantly depending on deposition temperature and pressure. The tendency of composition variation on a TiN substrate was the same as that on a SiO2 substrate. Finally, flat Ge2Sb2Te5 thin films were obtained below 300 °C using tert-butylgermanium, triisopropylantimony and diisopropyltellurium as precursors.

• 2010-05-25

著者

• Atsushi Ogura

  School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan

• Takayuki Ohba

  School of Engineering, the University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, Japan

• Yoshio Ohshita

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

• Masato Ishikawa

  Gas-phase Growth Ltd., Koganei, Tokyo 184-0012, Japan

• Takayuki Ohba

  School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan

• Hideaki Machida

  Gas-phase Growth Ltd., Koganei, Tokyo 184-0012, Japan

• Seichi Hamada

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Takafumi Horiike

  School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan

• Yoshio Ohshita

  Toyota Technological Institute, Nagoya 468-8511, Japan

関連論文

• Suppression of Fermi Level Pinning and Flat Band Voltage Shift by Inserting Diamond-Like Carbon at a High-$k$/SiO2 Interface in a Gate Stack Structure
• Investigation of Thermal Stability of TiN Film Formed by Atomic Layer Deposition Using Tetrakis(dimethylamino)titanium Precursor for Metal-Gate Metal–Oxide–Semiconductor Field-Effect Transistor
• Study of Charge Trap Sites in SiN Films by Hard X-ray Photoelectron Spectroscopy
• Nanoscale Wet Etching of Physical-Vapor-Deposited Titanium Nitride and Its Application to Sub-30-nm-Gate-Length Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistor Fabrication
• Hybrid Electrochemical Mechanical Planarization Process for Cu Dual-Damascene Through-Silicon Via Using Noncontact Electrode Pad
• Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory
• Evaluation of Anisotropic Biaxial Stress by Raman Spectroscopy with a High Numerical Aperture Immersion Objective Lens
• Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth
• Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy

スポンサーリンク