Yoshio Ohshita | Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
スポンサーリンク
概要
- Yoshio Ohshita の詳細を見る
- 同名の論文著者
- Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japanの論文著者
関連著者
-
Yoshio Ohshita
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
SUZUKI Hidetoshi
Toyota Technological Institute
-
Masafumi Yamaguchi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Kojima Nobuaki
Toyota Technological Institute
-
BOUZAZI Boussairi
Toyota Technological Institute
-
Atsushi Ogura
School of Science and Technology, Meiji University, 1-1-1 Higashimita, Tama-ku, Kawasaki 214-8571, Japan
-
Takayuki Ohba
School of Engineering, the University of Tokyo, 2-11-16 Yayoi, Bunkyo, Tokyo 113-8656, Japan
-
Inagaki Makoto
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Honda Takahiko
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Nobuaki Kojima
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Makoto Inagaki
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Hidetoshi Suzuki
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Boussairi Bouzazi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Masato Ishikawa
Gas-phase Growth Ltd., Koganei, Tokyo 184-0012, Japan
-
Takayuki Ohba
School of Engineering, The University of Tokyo, Bunkyo, Tokyo 113-8656, Japan
-
Hideaki Machida
Gas-phase Growth Ltd., Koganei, Tokyo 184-0012, Japan
-
Seichi Hamada
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
-
Takafumi Horiike
School of Science and Technology, Meiji University, Kawasaki 214-8571, Japan
-
Yoshio Ohshita
Toyota Technological Institute, Nagoya 468-8511, Japan
著作論文
- Chemical Vapor Deposition of GeSbTe Thin Films for Next-Generation Phase Change Memory
- Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth
- Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy