Inagaki Makoto | Toyota Technological Institute, Nagoya 468-8511, Japan

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概要

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• 同名の論文著者
• Toyota Technological Institute, Nagoya 468-8511, Japanの論文著者

関連著者

• Inagaki Makoto

  Toyota Technological Institute, Nagoya 468-8511, Japan

• Kojima Nobuaki

  Toyota Technological Institute

• Ohshita Yoshio

  Toyota Technological Inst. Nagoya Jpn

• Honda Takahiko

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

• YAMAGUCHI Masafumi

  Toyota Technological Institute

• Ohshita Yoshio

  Toyota Technological Institute, Nagoya 468-8511, Japan

• Suzuki Hidetoshi

  Interdisciplinary Research Organization, University of Miyazaki, Miyazaki 889-2192, Japan

• Ikeda Kazuma

  Toyota Technological Institute, Nagoya 468-8511, Japan

• Fukuyama Atsuhiko

  Faculty Of Engineering Miyazaki University

• SUZUKI Hidetoshi

  Toyota Technological Institute

• Suzuki Akio

  Faculty Of Science Tohoku University

• Yoshio Ohshita

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

• Mutaguchi Kazumasa

  Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

• Yamagichi Masafumi

  Toyota Technological Institute, Nagoya 468-8511, Japan

• Nobuaki Kojima

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

• Masafumi Yamaguchi

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

• Suzuki Hidetoshi

  University of Miyazaki, Miyazaki 889-2154, Japan

• Makoto Inagaki

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

• Kojima Nobuaki

  Toyota Technological Institute, Nagoya 468-8511, Japan

• Fukuyama Atsuhiko

  Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

• Hidetoshi Suzuki

  Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan

• Suzuki Akio

  Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan

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著作論文

• Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
• Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
• Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth
• Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''

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