Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
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概要
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Decreasing the growth rate in chemical beam epitaxy (CBE) is effective to improve the hole mobility and minority-carrier lifetime in p-GaAsN films. The hole mobility increased from 120 to 150 cm2 V-1 s-1 for the N composition of 0.6%. The minority-carrier lifetime improved from $3.2\times 10^{-1}$ ($[\mathrm{N}] = 0.6$%) to $9.0\times 10^{-1}$ ns ($[\mathrm{N}] = 0.8$%) despite the higher N composition. N-related scattering centers are indicated to be the dominant scattering centers at approximately room temperature. Controlling the growth rate is considered to be effective to reduce the amount of N-related scattering centers and nonradiative recombination centers.
- 2011-08-25
著者
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YAMAGUCHI Masafumi
Toyota Technological Institute
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Kojima Nobuaki
Toyota Technological Institute
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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Inagaki Makoto
Toyota Technological Institute, Nagoya 468-8511, Japan
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Honda Takahiko
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Suzuki Hidetoshi
University of Miyazaki, Miyazaki 889-2154, Japan
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Ikeda Kazuma
Toyota Technological Institute, Nagoya 468-8511, Japan
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Kojima Nobuaki
Toyota Technological Institute, Nagoya 468-8511, Japan
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