Improvements in Optoelectrical Properties of GaAsN by Controlling Step Density during Chemical Beam Epitaxy Growth
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概要
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Improvements in optoelectrical properties of GaAsN are demonstrated by chemical beam epitaxy (CBE) growth on high-step-density GaAs substrates. The step density at the growing surface is controlled using 2, 4, and 10° off GaAs(001) wafers as substrates. The number of carrier scattering centers induced by N ($\mathit{SC}_{\text{N}}$) in the grown GaAsN films is quantitatively evaluated from the temperature dependence of hole mobility and used as an indicator of film quality. In previous studies, $\mathit{SC}_{\text{N}}$ increased with increasing N composition independently of the growth technique used. By CBE with high-step-density substrates, the reduction in $\mathit{SC}_{\text{N}}$ is achieved. This method also improves the emission intensity of cathode luminescence.
- 2010-04-25
著者
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SUZUKI Hidetoshi
Toyota Technological Institute
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Yoshio Ohshita
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Inagaki Makoto
Toyota Technological Institute, Nagoya 468-8511, Japan
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Honda Takahiko
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Nobuaki Kojima
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Masafumi Yamaguchi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Makoto Inagaki
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Hidetoshi Suzuki
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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