Kojima Nobuaki | Toyota Technological Institute
スポンサーリンク
概要
関連著者
-
Kojima Nobuaki
Toyota Technological Institute
-
YAMAGUCHI Masafumi
Toyota Technological Institute
-
Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
-
SUZUKI Hidetoshi
Toyota Technological Institute
-
BOUZAZI Boussairi
Toyota Technological Institute
-
Ohshita Yoshio
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Inagaki Makoto
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Ikeda Kazuma
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Nishimura Kenichi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Saito Kenji
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Suzuki Hidetoshi
Interdisciplinary Research Organization, University of Miyazaki, Miyazaki 889-2192, Japan
-
Honda Takahiko
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Suzuki Hidetoshi
University of Miyazaki, Miyazaki 889-2154, Japan
-
Kojima Nobuaki
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Fukuyama Atsuhiko
Faculty Of Engineering Miyazaki University
-
OHSHITA Yoshio
Toyota Technological Institute
-
ISHIKAWA Naomi
Toyota Technological Institute
-
Suzuki Akio
Faculty Of Science Tohoku University
-
Yamashita Yusuke
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Yoshio Ohshita
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Ohshita Yoshio
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Hashiguchi Taiki
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Mutaguchi Kazumasa
Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
-
Yamagichi Masafumi
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Masafumi Yamaguchi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Kojima Nobuaki
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Kojima Nobuaki
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
-
Lee Jong-Han
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Yamaguchi Masafumi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
-
Nishimura Kenichi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
-
Fukuyama Atsuhiko
Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
-
Saito Kenji
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
-
Boussairi Bouzazi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Bouzazi Boussairi
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Suzuki Hidetoshi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku-ku, Nagoya 468-8511, Japan
-
Suzuki Hidetoshi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
-
Suzuki Hidetoshi
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Suzuki Akio
Faculity of Engineering, University of Miyazaki, Miyazaki 889-2192, Japan
-
Yamashita Yusuke
Toyota Central R&D Laboratories Inc., Nagakute, Aichi 480-1192, Japan
-
Morales Crisoforo
Toyota Technological Institute, Nagoya 468-8511, Japan
-
Nishi Seiji
Toyota Technological Institute, Nagoya 468-8511, Japan
著作論文
- Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
- Shallow Carrier Trap Levels in GaAsN Investigated by Photoluminescence
- Analysis of Photovoltaic Properties of C_60-Si Heterojunction Solar Cells
- Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films
- Structural and Molecular Changes of C Thin Films with Incorporated Magnesium Atoms (Special Issue : Solid State Devices and Materials (2))
- Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Crystal Structures of Copper–Phthalocyanine on C60(111) Surface Grown by Molecular Beam Epitaxy
- Effects of Residual Carbon and Hydrogen Atoms on Electrical Property of GaAsN Films Grown by Chemical Beam Epitaxy
- Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Carbon Reduction in GaAsN Thin Films by Flow-Rate-Modulated Chemical Beam Epitaxy
- Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
- Erratum: ``Effect of Low Growth Rate in Chemical Beam Epitaxy on Carrier Mobility and Lifetime of p-GaAsN Films''
- III--V--N Materials for Super-High Efficiency Multi Junction Solar Cells