BOUZAZI Boussairi | Toyota Technological Institute
スポンサーリンク
概要
関連著者
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BOUZAZI Boussairi
Toyota Technological Institute
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Kojima Nobuaki
Toyota Technological Institute
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YAMAGUCHI Masafumi
Toyota Technological Institute
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Ohshita Yoshio
Toyota Technological Inst. Nagoya Jpn
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SUZUKI Hidetoshi
Toyota Technological Institute
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OHSHITA Yoshio
Toyota Technological Institute
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Yoshio Ohshita
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Ohshita Yoshio
Toyota Technological Institute, Nagoya 468-8511, Japan
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Masafumi Yamaguchi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Suzuki Hidetoshi
University of Miyazaki, Miyazaki 889-2154, Japan
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Ikeda Kazuma
Toyota Technological Institute, Nagoya 468-8511, Japan
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Kojima Nobuaki
Toyota Technological Institute, Nagoya 468-8511, Japan
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Lee Jong-Han
Toyota Technological Institute, Nagoya 468-8511, Japan
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Boussairi Bouzazi
Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511, Japan
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Bouzazi Boussairi
Toyota Technological Institute, Nagoya 468-8511, Japan
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Suzuki Hidetoshi
Toyota Technological Institute, Nagoya 468-8511, Japan
著作論文
- Nitrogen Related Electron Trap with High Capture Cross Section in n-Type GaAsN Grown by Chemical Beam Epitaxy
- Effect of Thermal Stress on a N-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Origin Investigation of a Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Nitrogen-Related Recombination Center in GaAsN Grown by Chemical Beam Epitaxy
- Properties of a Nitrogen-Related Hole Trap Acceptor-Like State in p-Type GaAsN Grown by Chemical Beam Epitaxy
- III--V--N Materials for Super-High Efficiency Multi Junction Solar Cells
- Effect of surface morphology on the density of energy states in GaAsN grown by chemical beam epitaxy