Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-08-15

著者

• Iqbal Mohd

  Semiconductor Physics Laboratory Department Of Physics Quaid-i-azam University

• BIMBERG D.

  Institut fur Festkorperphysik, Technische Universitat Berlin

• YAMAGUCHI Masafumi

  Toyota Technological Institute

• Qurashi Umar

  Semiconductor Physics Laboratory Department Of Physics Quaid-i-azam University

• Khan A

  Toyota Technological Inst. Nagoya Jpn

• Bimberg D

  Institut Fur Festkorperphysik Technische Universitat Berlin

• Bimberg D.

  Institut Fur Festkorperphysik Technische Universitat Berlin

• KHAN Aurangzeb

  Semiconductor Physics Laboratory, Department of Physics, Quaid-i-Azam University

• ZAFAR Nasim

  Semiconductor Physics Laboratory, Department of Physics, Quaid-i-Azam University

• DADGAR Armin

  Institut fur Festkorperphysik, Technische Universitat Berlin

• Zafar Nasim

  Semiconductor Physics Laboratory Department Of Physics Quaid-i-azam University

• Dadgar Armin

  Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics

• Dadgar Armin

  Institut Fur Festkorperphysik Technische Universitat Berlin

• Khan Aurangzeb

  Semiconductor Physics Laboratory Department Of Physics Quaid-i-azam University:toyota Technological

• Bimberg D

  Technische Univ. Berlin Berlin Deu

• Dadgar Armin

  Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany

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