Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-04-30
著者
-
Zhukov A
A.f. Ioffe Physicotechnical Inst. Russian Acad. Sci. St. Petersburg Rus
-
Ustinov V
A.f. Ioffe Physicotechnical Inst. Russian Acad. Sci. St. Petersburg Rus
-
Ustinov V.m.
A.f.ioffe Physical-technical Institute
-
Ustinov V.
A.f. Ioffe-institut
-
GRUNDMANN Marius
Institut fur Festkorperphysik, TU-Berlin
-
BIMBERG Dieter
Institut fur Festkorperphysik, TU-Berlin
-
HEINRICHSDORFF Frank
Institut fur Festkorperphysik, Technische Universitat Berlin
-
LEDENTSOV Nikolai
Institut fur Festkorperphysik, Technische Universitat Berlin
-
RIBBAT Christian
Institut fur Festkorperphysik, Technische Universitat Berlin
-
ZHUKOV Alexei
A.F.Ioffe-Institut
-
KOVSH Alexei
A.F.Ioffe-Institut
-
MAXIMOV Mikhail
A.F.Ioffe-Institut
-
SHERNYAKOV Yuri
A.F.Ioffe-Institut
-
LIFSHITS Daniel
A.F.Ioffe-Institut
-
USTINOV Victor
A.F.Ioffe-Institut
-
ALFEROV Zhores
A.F.Ioffe-Institut
-
LEDENTSOV N.
A.F. Ioffe-Institut
-
Grundmann Marius
Institut Fur Festkorperphysik Tu-berlin
-
Ribbat Christian
Institut Fur Festkorperphysik Technische Universitat Berlin
-
Grundmann Marius
Institut Fur Festkorperphysik Technische Universitat Berlin
-
Bimberg D
Institut Fur Festkorperphysik Technische Universitat Berlin
-
Bimberg Dieter
Institut Fur Festkorperphysik Technische Universitat Berlin
-
Ledentsov Nikolai
Technische Universitat Berlin:abraham F. Ioffe Physical Technical Institute
-
Ledentsov Nikolai
Institut Fur Festkorperphysik Technische Universitat Berlin
-
Alferov Zhores
Abraham F. Ioffe Physical Technical Institute
-
Heinrichsdorff F
Technische Univ. Berlin Berlin Deu
-
Ledentsov Nikolai
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
-
Bimberg Dieter
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
関連論文
- Multi-Stacked InAs/InGaAs/InP Quantum Dot Laser (j_=11 A/cm^2, λ=1.9μm (77 K))
- Negative Characteristic Temperature of InGaAs Quantum Dot Injection Laser ( Quantum Dot Structures)
- InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition ( Quantum Dot Structures)
- High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
- Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
- Vertically Coupled Quantum Dot Lasers : First Device Oriented Structures with High Internal Quantum Efficiency ( Quantum Dot Structures)
- InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T_0 = 385 K) Grown by Metal Organic Chemical Vapour Deposition ( Quantum Dot Structures)
- Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition ( Quantum Dot Structures)
- Progress in Quantum Dot Lasers : 1100nm, 1300nm and High Power Application
- InAs-GaAs Quantum Pyramid Lasers:In Situ Growth, Radiative Lifetimes and Polarization Properties
- InAs-GaAs Quantum Dot Lasers : in Situ Growth, Radiative Lifetimes and Polarization Properties
- Time-resolved Photoluminescence and Carrier Dynamics in Vertically-coupled Self-assembled Quantum Dots
- Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics : Review Paper
- Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
- Gain and Threshold of Quantum Dot Lasers : Theory and Comparison to Experiments ( Quantum Dot Structures)
- Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
- Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers
- Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs
- Auger Capture Induced Carrier Heating in Quantum Dot Lasers and Amplifiers
- Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates