Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
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概要
- 論文の詳細を見る
InGaN insertions in a GaN matrix provide efficient lateral carrier localization on a nanoscale level as established by nonresonant and resonant time-resolved photoluminescence studies. In the case of resonant excitation the line width is defined by the excitation laser pulse only, while the decay characteristic remains the same as that in the case of nonresonant excitation. No spectral shift of the resonant photoluminescence peak which could be caused by reducing the piezoelectric screening of nonequilibrium carriers was found. This demonstrates that only one electron-hole pair may be generated in a compositional domain, which must have a strong localization and wide energy spacing.
- Japan Society of Applied Physicsの論文
- 2003-09-15
著者
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HOFFMANN Axel
Institut fur Festkorperphysik der TU Berlin
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Bimberg Dieter
Institut Fur Festkorperphysik Technische Universitat Berlin
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KRESTNIKOV Igor
Institut fur Festkorperphysik, Technische Universitat Berlin
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Christen Jurgen
Institut Fur Experimentelle Physik Otto-von-guericke Universitat
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Strittmatter Andre
Institut Fur Festkorperphysik Technische Universitat Berlin
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Ledentsov Nikolai
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
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Strassburg Martin
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
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Bimberg Dieter
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
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Krestnikov Igor
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
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Hoffmann Axel
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
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