Gain and Threshold of Quantum Dot Lasers : Theory and Comparison to Experiments (<Special Issue> Quantum Dot Structures)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1997-06-30

著者

• GRUNDMANN Marius

  Institut fur Festkorperphysik, TU-Berlin

• BIMBERG Dieter

  Institut fur Festkorperphysik, TU-Berlin

• Grundmann Marius

  Institut Fur Festkorperphysik Technische Universitat Berlin

• Bimberg Dieter

  Institut Fur Festkorperphysik Technische Universitat Berlin

• Bimberg Dieter

  Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

関連論文

• High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
• Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
• InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T_0 = 385 K) Grown by Metal Organic Chemical Vapour Deposition ( Quantum Dot Structures)
• Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition ( Quantum Dot Structures)
• Gain and Threshold of Quantum Dot Lasers : Theory and Comparison to Experiments ( Quantum Dot Structures)
• Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
• Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers
• Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs
• Auger Capture Induced Carrier Heating in Quantum Dot Lasers and Amplifiers
• Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

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