Auger Capture Induced Carrier Heating in Quantum Dot Lasers and Amplifiers
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概要
- 論文の詳細を見る
Carrier heating in quantum dot (QD) devices, which accompanies Auger capture of carriers from a carrier reservoir to discrete QD levels, is considered for the first time. Equations for carrier dynamics of QD structures are formulated and analyzed by taking into account the carrier heating. A numerical example shows that heating of carriers in a carrier reservoir of a QD structure can be much higher than that of bulk and quantum well devices. Auger capture carrier heating in QD devices can lead to a longer (more than a factor of 2 for the 90%-recovery time) relaxation time from a carrier reservoir to QDs.
- 2011-02-25
著者
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Bimberg Dieter
Institut für Festkörperphysik, Technische Universität Berlin, Harderbergstr. 36, Berlin 10623, Germany
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Bimberg Dieter
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
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Uskov Alexander
Institut für Festkörperphysik, Technische Universität Berlin, Harderbergstr. 36, Berlin 10623, Germany
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Meuer Christian
Institut für Festkörperphysik, Technische Universität Berlin, Harderbergstr. 36, Berlin 10623, Germany
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Schmeckebier Holger
Institut für Festkörperphysik, Technische Universität Berlin, Harderbergstr. 36, Berlin 10623, Germany
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Uskov Alexander
Institut für Festkörperphysik, Technische Universität Berlin, Harderbergstr. 36, Berlin 10623, Germany
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Meuer Christian
Institut für Festkörperphysik, Technische Universität Berlin, Harderbergstr. 36, Berlin 10623, Germany
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Schmeckebier Holger
Institut für Festkörperphysik, Technische Universität Berlin, Harderbergstr. 36, Berlin 10623, Germany
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