Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers

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概要

• 論文の詳細を見る

• A comparative study of semiconductor optical amplifiers (SOAs) with either InAs/InGaAsP quantum dots (QDs) or quantum dashes (QDashes) in the active region is demonstrated using metalorganic vapor phase epitaxy (MOVPE). The type of the nanostructure, QDs vs QDashes, depends on details of the growth parameters. Stacked layers with a high density of either QDs or QDashes were implemented in SOAs with otherwise identical design. QD and QDash SOAs operating at 1.5 μm yield broad 10 dB bandwidth of 130 and 100 nm, and a peak gain of 15 and 25 dB, respectively.

• 2011-01-25

著者

• Pohl Udo

  Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

• Wenning Felix

  Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany

• Bimberg Dieter

  Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

• Franke Dieter

  Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany

• Kreissl Jochen

  Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany

• Rehbein Wolfgang

  Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany

• Kuenzel Harald

  Fraunhofer Institute for Telecommunications, Heinrich-Hertz-Institut, Einsteinufer 37, 10587 Berlin, Germany

関連論文

• High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
• Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
• InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T_0 = 385 K) Grown by Metal Organic Chemical Vapour Deposition ( Quantum Dot Structures)
• Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition ( Quantum Dot Structures)
• Gain and Threshold of Quantum Dot Lasers : Theory and Comparison to Experiments ( Quantum Dot Structures)
• Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
• Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers
• Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs
• Auger Capture Induced Carrier Heating in Quantum Dot Lasers and Amplifiers
• Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

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