Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

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概要

• 論文の詳細を見る
• Japan Society of Applied Physicsの論文
• 2003-09-15

著者

• Christen Jurgen

  Institute Of Experimental Physics Otto-von-guericke University

• BIMBERG Dieter

  Institut fur Festkorperphysik, TU-Berlin

• LEDENTSOV Nikolai

  Institut fur Festkorperphysik, Technische Universitat Berlin

• HOFFMANN Axel

  Institut fur Festkorperphysik der TU Berlin

• Bimberg D

  Institut Fur Festkorperphysik Technische Universitat Berlin

• KRESTNIKOV Igor

  Institut fur Festkorperphysik, Technische Universitat Berlin

• STRASSBURG Martin

  Institut fur Festkorperphysik, Technische Universitat Berlin

• STRITTMATTER Andre

  Institut fur Festkorperphysik, Technische Universitat Berlin

関連論文

• InAs/GaAs Quantum Dots Grown by Metalorganic Chemical Vapor Deposition ( Quantum Dot Structures)
• High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
• Progress in Quantum Dot Lasers : 1100 nm, 1300 nm, and High Power Applications
• InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T_0 = 385 K) Grown by Metal Organic Chemical Vapour Deposition ( Quantum Dot Structures)
• Growth and Characterization of Coherent Quantum Dots Grown by Single- and Multi-Cycle Metal-Organic Chemical Vapour Deposition ( Quantum Dot Structures)
• Spatially Resolved Imaging of the Spectral Emission Characteristic of an InGaN/GaN-Multi Quantum Well-Light-Emitting Diode by Scanning Electroluminescence Microscopy
• Spatially Resolved Imaging of the Spectral Emission Characteristic of InGaN-MQW-LEDs by Scanning Electroluminescence Microscopy
• Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Progress in Quantum Dot Lasers : 1100nm, 1300nm and High Power Application
• InAs-GaAs Quantum Pyramid Lasers:In Situ Growth, Radiative Lifetimes and Polarization Properties
• InAs-GaAs Quantum Dot Lasers : in Situ Growth, Radiative Lifetimes and Polarization Properties
• Non-planar Selective Area Growth and Characterization of GaN and AlGaN
• Strain Modification of GaN in AlGaN/GaN Epitaxial Films
• Self-Organized InGaAs Quantum Dots for Advanced Applications in Optoelectronics : Review Paper
• Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
• Gain and Threshold of Quantum Dot Lasers : Theory and Comparison to Experiments ( Quantum Dot Structures)
• Local Stress Analysis of Epitaxial Laterally-Overgrown GaN
• Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
• Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors
• Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
• Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs
• On the Origin of the Unexpected Annealing Behavior of GaInNAs Quantum Wells
• Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates

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