Non-planar Selective Area Growth and Characterization of GaN and AlGaN

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概要

• 論文の詳細を見る
• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-10-15

著者

• Keller Stacia

  Department Of Electrical And Computer Engineering University Of California

• DenBaars Steven

  Department of Materials Engineering, University of California

• Mishra U

  Department Of Electrical And Computer Engineering University Of California

• Keller Stacia

  Electrical And Computer Engineering Department University Of California

• Christen Jurgen

  Institute Of Experimental Physics Otto-von-guericke University

• MISHRA Umesh

  Department of Electrical and Computer Engineering, University of California

• HEIKMAN Sten

  Department of Electrical and Computer Engineering and Materials Department, University of California

• BERTRAM Frank

  Institute of Experimental Physics, Otto-von-Guericke University

関連論文

• 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
• 立方晶および六方晶InGaNの発光特性比較 : 分極効果の有無と励起子局在効果(進展する窒化物半導体光・電子デバイスの現状,及び一般)
• Continuous-Wave Operation of Pure Blue AlGaN-Cladding-Free Nonpolar InGaN-GaN Laser Diodes
• Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
• Milliwatt Power Deep Ultraviolet Light Emitting Diodes Grown on Silicon Carbide
• Spatially Resolved Imaging of the Spectral Emission Characteristic of an InGaN/GaN-Multi Quantum Well-Light-Emitting Diode by Scanning Electroluminescence Microscopy
• Spatially Resolved Imaging of the Spectral Emission Characteristic of InGaN-MQW-LEDs by Scanning Electroluminescence Microscopy
• Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Si Delta-Doped m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors
• Enhancement-Mode m-plane AlGaN/GaN Heterojunction Field-Effect Transistors
• Metalorganic Chemical Vapor Deposition Regrowth of InGaN and GaN on N-polar Pillar and Stripe Nanostructures
• Light-Emitting Diode Based on ZnO and GaN Direct Wafer Bonding
• Low ohmic contact resistance m-plane AlGaN/GaN heterojunction field-effect transistors with enhancement-mode operations
• Si delta-doped m-plane AIGaN/GaN heterojunction field-effect transistors
• Effect of the Nucleation Conditions on the Polarity of AlN and GaN Films Grown on C-face 6H-SiC
• Epitaxial Lateral Overgrowth of High Al Composition AlGaN Alloys on Deep Grooved SiC Substrates
• Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
• Non-planar Selective Area Growth and Characterization of GaN and AlGaN
• GaN-Based FETs for Microwave Power Amplification (Special Issue on High-Frequency/speed Devices in the 21st Century)
• Optical Properties of InGaN/GaN Quantum Wells with Si Doped Barriers
• Spiral Growth of InGaN Nanoscale Islands on GaN
• Effect of the Trimethylgallium Flow during Nucleation Layer Growth on the Properties of GaN Grown on Sapphire
• Influence of Growth Temperature and Thickness of AlGaN Caps on Electron Teansport in AlGaN/GaN Heterostructures Grown by Plasma-assisted Molecular Beam Epitaxy : Semiconductors
• Electron Transport in AlGaN/GaN Heterostructures Grown by Plasma-Assisted Molecular Beam Epitaxy
• Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
• Dislocation Reduction in AlGaN/GaN Heterostructures on 4H-SiC by Molecular Beam Epitaxy in the Thermal Decomposition Regime
• Improved Performance of Plasma-Assisted Molecular Beam Epitaxy Grown AlGaN/GaN High Electron Mobility Transistors with Gate-Recess and CF_4-Treatment
• Review of Recent Developments in Growth of AlGaN/GaN High-Electron Mobility Transistors on 4H-SiC by Plasma-Assisted Molecular Beam Epitaxy(GaN-Based Devices,Heterostructure Microelectronics with TWHM2005)
• Microstructural and Optical Evaluation of Nitride Light-Emitting Diodes and II-VI Distributed Bragg Reflectors Combined by Direct Wafer Bonding
• Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
• Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
• Wafer Bonding of GaN and ZnSSe for Optoelectronic Applications
• Selective Area Mass Transport Regrowth of Gallium Nitride
• Memory Effect and Redistribution of Mg into Sequentially Regrown GaN Layer by Metalorganic Chemical Vapor Deposition
• MOCVD Growth of GaN for Blue Lasers and High Electron Mobility Transistors
• The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganie Chemical Vapor Deposition
• Morphological and Structural Transitions in GaN Filrms Grown on Sapphire by Metal-Organic Chemical Vapor Deposition
• Comparison of Optical Properties of GaN/AlGaN and InGaN/AlGaN Single Quantum Wells
• Local Stress Analysis of Epitaxial Laterally-Overgrown GaN
• Lasing Characteristics of InGaP/InGaAIP Visible Lasers Grown by Metalorganic Chemical Vapor Deposition with Tertiarybutylphosphine (TBP)
• Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
• Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors
• Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
• Low Ohmic Contact Resistance m-Plane AlGaN/GaN Heterojunction Field-Effect Transistors with Enhancement-Mode Operations
• Enhancement-Mode $m$-plane AlGaN/GaN Heterojunction Field-Effect Transistors with +3 V of Threshold Voltage Using Al2O3 Deposited by Atomic Layer Deposition
• Study of the n+ GaN Cap in AlGaN/GaN High Electron Mobility Transistors with Reduced Source–Drain Resistance
• Nonpolar $m$-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
• Recessed Slant Gate AlGaN/GaN High Electron Mobility Transistors with 20.9 W/mm at 10 GHz

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