Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine

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概要

• 論文の詳細を見る

• Tertiarybutylhydrazine was used as a novel nitrogen source for metalorganic vapor phase epitaxy of GaN at low temperatures. Hexagonal epilayers with optically smooth and specular surfaces were grown with trimethylgallium on basal plane sapphire as well as GaAs(111)_B substrates. On (001)-oriented GaAs, predominantly cubic GaN was grown. Incorporation of carbon impurities was distinctly lower than in layers grown with dimethylhydrazine. The epilayer quality is presently limited by the purity of the available tertiarybutylhydrazine.

• 社団法人応用物理学会の論文
• 1999-02-01

著者

• Pohl Udo

  Institut Fur Festkorperphysik Technische Universitat Berlin

• Knorr Kerstin

  Institut Fur Festkorperphysik Technische Universitat Berlin

• Christen Jurgen

  Institute Of Experimental Physics Otto-von-guericke University

• RICHTER Wolfgang

  Institut fur Festkorperphysik, PN 6-1, Technische Universitat Berlin

• Schumann Herbert

  Institut Fur Anorganische Und Analyische Chemie Technische Universitat Berlin

• Richter Wolfgang

  Institut Fur Festkorperphysik Technische Universitat Berlin

• Richter Wolfgang

  Institut Fur Festkorperphysik Friedrich-schiller University

• Christen Jurgen

  Institut Fur Experimentelle Physik Otto-von-guericke Universitat

• MOLLER Carsten

  Institut fur Festkorperphysik, Technische Universitat Berlin

• GERNERT Ulrich

  Institut fur Festkorperphysik, Technische Universitat Berlin

• BLASING Jurgen

  Institut fur Experimentelle Physik, Otto-von-Guericke Universitat

• GOTTFRIEDSEN Jochen

  Institut fur Anorganische und Analyische Chemie, Technische Universitat Berlin

• Blaesing J

  Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics

• Gernert Ulrich

  Institut Fur Festkorperphysik Technische Universitat Berlin:also Central Department Of Electron Micr

• Moller Carsten

  Institut Fur Festkorperphysik Technische Universitat Berlin

• Gottfriedsen Jochen

  Institut Fur Anorganische Und Analyische Chemie Technische Universitat Berlin

• Pohl Udo

  Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany

関連論文

• A New Approach to Grow Polycrystalline CuGaSe_2 Thin Films : Chemical Vapor Deposition with I_2 as Transport Agent
• Spatially Resolved Imaging of the Spectral Emission Characteristic of an InGaN/GaN-Multi Quantum Well-Light-Emitting Diode by Scanning Electroluminescence Microscopy
• Spatially Resolved Imaging of the Spectral Emission Characteristic of InGaN-MQW-LEDs by Scanning Electroluminescence Microscopy
• Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
• Non-planar Selective Area Growth and Characterization of GaN and AlGaN
• The structure of Si nanocrystals on SiC
• Local Stress Analysis of Epitaxial Laterally-Overgrown GaN
• Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
• Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors
• Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
• Effect of the Shape of InAs Nanostructures on the Characteristics of InP-Based Buried Heterostructure Semiconductor Optical Amplifiers
• Atomic Structure of Buried InAs Sub-Monolayer Depositions in GaAs
• Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si(111) Exceeding 1 μm in Thickness
• X-ray Study of Step Induced Lateral Correlation Lengths in Thin AlGaN Nucleation Layers
• Non-planar Selective Area Growth and Characterization of GaN and AlGaN
• Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
• Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
• Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content (Special Issue : Recent Advances in Nitride Semiconductors)

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