Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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BLASING Jurgen
Institut fur Experimentelle Physik, Otto-von-Guericke Universitat
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Dadgar Armin
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
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Krost Alois
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
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Moser Pascal
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
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Berger Christoph
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany
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Calle Fernando
Instituto de Sistemas Optoelectrónicos y Microtecnología (ISOM) and Departamento de Ingeniería Electrónica, E.T.S.I. Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
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Romero María
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany
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Goldhahn Rüdiger
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany
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Sakalauskas Egidijus
Institut für Physik, Technische Universität Ilmenau, PF100565, 98684 Ilmenau, Germany
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Feneberg Martin
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany
関連論文
- High Resolution X-Ray Diffraction and Reflectivity Studies of Vertical and Lateral Ordering in Multiple Self-Organized InGaAs Quantum Dots ( Quantum Dot Structures)
- Characteristics of Alpha-Radiation-Induced Deep Level Defects in p-Type InP Grown by Metal-Organic Chemical Vapor Deposition
- Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors
- Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
- Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si(111) Exceeding 1 μm in Thickness
- X-ray Study of Step Induced Lateral Correlation Lengths in Thin AlGaN Nucleation Layers
- Comparison of Two Reconfigurable N×N Interconnects for a Recurrent Neural Network
- Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces
- Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer
- Injection-Activated Defect-Governed Recombination Rate in InN
- Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
- Impact of AlN Spacer on Metal--Semiconductor--Metal Pt--InAlGaN/GaN Heterostructures for Ultraviolet Detection
- Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection (Special Issue : Recent Advances in Nitride Semiconductors)
- Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer (Special Issue : Recent Advances in Nitride Semiconductors)
- Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content (Special Issue : Recent Advances in Nitride Semiconductors)
- Injection-Activated Defect-Governed Recombination Rate in InN