Injection-Activated Defect-Governed Recombination Rate in InN

スポンサーリンク

概要

• 論文の詳細を見る

• Excess carrier dynamics was investigated by free-carrier absorption and light-induced transient grating techniques in InN layers with residual electron density varying from n_{0}=1.4\times 10^{18} to 4.7\times 10^{18} cm^-3in a wide excitation range (up to 10^{20} cm^-3). Carrier lifetime \tau decreased with injected carrier density \Delta N\geq n_{0} and followed the same inverse relationship as on residual electron density \tau \propto[B(n_{0}+\Delta N)]^{-1}, thus confirming defect-related recombination mechanism. Its nonradiative origin was verified by \tau(T) measurements and ascribed to injection-enhanced nonlinear recombination via defect-assisted Auger recombination with C_{\text{TAAR}}= B/N_{\text{T}}=(4.5\pm 2)\times 10^{-28} cm⁶/s, assuming the defect density N_{\text{T}} being equal to electron density. Oxygen or hydrogen impurities are proposed as possible candidates for traps assisting in Auger process.

• 2013-08-25

著者

• Yamaguchi Tomohiro

  Department Of Applied Chemistry Faculty Of Engineering Kumamoto University

• Nanishi Yasushi

  Department Of Photonics Faculty Of Science And Engineering Ritsumeikan University

• Jarasiunas Kestutis

  Institute Of Material Science And Applied Research Vilnius University

• Sakalauskas Egidijus

  Institut für Physik, Technische Universität Ilmenau, PF100565, 98684 Ilmenau, Germany

• Nargelas Saulius

  Institute of Applied Research, Vilnius University, 10222 Vilnius, Lithuania

• Vengris Mikas

  Laser Research Center, Vilnius University, 10223 Vilnius, Lithuania

関連論文

• Detection of Plasma Endotoxin Using a Novel Rapid Limulus Amoebocyte Lysate Assay in a Patient with Sepsis Caused by Colorectal Perforation During Tocilizumab Treatment
• Characterization of Proton-Irradiated InGaAs/GaAs Multiple Quantum Well Structures by Nonresonant Transient Four-Wave Mixing Technique
• Interaction between CO_2 and Electrochemically Reduced Species of N-propyl-4,4'-bipyridinium Cation
• Indium Droplet Elimination by Radical Beam Irradiation for Reproducible and High-Quality Growth of InN by RF Molecular Beam Epitaxy
• Optimal Interplanetary Trajectories for Impulsive Deflection of Potentially Hazardous Asteroids under Velocity Increment Uncertainties
• Assessment of Benzydamine N-Oxidation Mediated by Flavin-Containing Monooxygenase in Different Regions of Rat Brain and Liver Using Microdialysis
• Anomalies in the Pulsed Photoconductivity of Undoped C_ and Their Relationship to Phase Transitions
• Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy
• Effects of Traps Formed by Threading Dislocations on Off-State Breakdown Characteristics in GaN Buffer Layer in AlGaN/GaN Heterostructure Field-Effect Transistors
• Growth of Hlgh-Electron-Mobility InN by RF Molecular Beam Epitaxy : Semiconductors
• Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure
• Pulse-Duration Memory Effect in the Spin-Density Waves of (TMTSF)_2AsF_6
• Polarity Determination of InN by Atomic Hydrogen Irradiation
• A Clinical Potential of the Anti-Cancer Drug Sensitivity Test for Patients with Endocrine Cell Carcinoma of the Rectum : Report of a Case
• Crystal Growth and Optical Property of GaN on Silica Glass by Electron-Cyclotron-Resonance Plasma-Excited Molecular Beam Epitaxy (ECR-MBE)
• Inhibition of Ethanol on the Na^+, K^+-ATPase in the Microsome Preparation from Kidney of Guinea Pig
• Multiple-subgenotype infections of Giardia intestinalis detected in Palestinian clinical cases using a subcloning approach
• In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN
• Entry Dispersion Analysis for the HAYABUSA Spacecraft using Ground-Based Optical Observation
• Strong Correlation Between Oxygen Donor and Near-Surface Electron Accumulation in Undoped and Mg-Doped In-Polar InN Films
• Fabrication and Characterization of InN-Based Quantum Well Structures Grown by Radio-Frequency Plasma-Assisted Molecular-Beam Epitaxy
• Transmission Electron Microscopy Characterization of Position-Controlled InN Nanocolumns
• RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
• Investigation of the Effect of Oxygen on the Near-Surface Electron Accumulation in Nonpolar m-Plane (10\bar{1}0) InN Film by Hard X-ray Photoelectron Spectroscopy
• Injection-Activated Defect-Governed Recombination Rate in InN
• Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
• Fabrication of Red, Green, and Blue Pixels Using Integrated GaN-Based Schottky-Type Light-Emitting Diodes
• Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content (Special Issue : Recent Advances in Nitride Semiconductors)
• Injection-Activated Defect-Governed Recombination Rate in InN

もっと見る 閉じる

スポンサーリンク