Fabrication and Characterization of InN-Based Quantum Well Structures Grown by Radio-Frequency Plasma-Assisted Molecular-Beam Epitaxy
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概要
- 論文の詳細を見る
InN/InxGa1-xN quantum well structures have been successfully fabricated on InN templates grown on (0 0 0 1) sapphire substrates by RF plasma assisted molecular beam epitaxy for the first time. The structure was confirmed by observing the 1st and 2nd satellite peaks of X-ray diffraction. From InN/In0.8Ga0.2N single quantum well structures with the different well widths of 2.3, 3.4 and 5.7 nm, photoluminescence (PL) emission from the well layers was observed at 77 K, and the PL peak energy slightly lowered with increasing well width. This dependence can be explained by combined effects of the quantum size effect, quantum confinement Stark effect, and band filling effect.
- Japan Society of Applied Physicsの論文
- 2005-01-10
著者
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Nanishi Yasushi
Department Of Photonics Faculty Of Science And Engineering Ritsumeikan University
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Miyajima Takao
Optoelectronics Laboratory Materials Laboratories Sony Corporation
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Araki Tsutomu
Department Of Applied Physics Faculty Of Engineering Osaka University
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Naoi Hiroyuki
Center For Promotion Of The Coe Program Ritsumeikan University
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Nanishi Yasushi
Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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Kurouchi Masahito
Department of Photonics, Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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Naoi Hiroyuki
Center for Promotion of the COE Program, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan
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Miyajima Takao
Optoelectronics Laboratory, Materials Laboratories, Sony Corporation, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014, Japan
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