In situ Investigation of Growth Mechanism during Molecular Beam Epitaxy of In-Polar InN
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概要
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A real-time investigation of In-polar InN growth by radio-frequency plasma-assisted molecular beam epitaxy has been conducted using laser reflection and reflected high-energy electron diffraction (RHEED). Laser reflection intensity is very sensitive to surface changes in the growth front. Clear reflection intensity changes have been observed for In-stabilized surface, In adlayer, and In droplet formation. Simultaneously, the envelope of reflection intensity variation shows interference oscillation due to the increasing InN thickness. Laser reflection intensity increases during In deposition and decreases during the following N irradiation, in contrast to RHEED intensity. In situ monitoring using both techniques has demonstrated complementary information on the growth front. On the basis of the observation from both techniques, the growth mechanisms and roles of the In adlayer and droplets in the InN growth are discussed.
- 2011-01-25
著者
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Yamaguchi Tomohiro
Research Organization Of Science And Engineering Ritsumeikan University
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Nanishi Yasushi
Department Of Photonics Faculty Of Science And Engineering Ritsumeikan University
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Yoon Euijoon
Wcu Hybrid Materials Program Department Of Materials Science And Engineering Seoul National Universi
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Araki Tsutomu
Department Of Applied Physics Faculty Of Engineering Osaka University
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Wang Ke
Research Organization of Science and Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Nanishi Yasushi
Department of Photonics, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Yoon Euijoon
WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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