Application of Droplet Elimination Process by Radical-Beam Irradiation to InGaN Growth and Fabrication of InN/InGaN Periodic Structure
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概要
- 論文の詳細を見る
A growth method, named droplet elimination by radical-beam irradiation (DERI), consisting of a metal-rich growth process (MRGP) and a droplet elimination process (DEP), was developed for the growth of InGaN ternary alloys. In the MRGP using the growth of InGaN under a metal-rich condition [$\text{N$^{*}$}/(\text{In}+\text{Ga})<1$], Ga was preferentially incorporated into the growing InGaN and In was forced out to the surface. This In was transformed to epitaxial InN on top of the InGaN underlayer in the DEP using a subsequent nitrogen radical-beam irradiation. By repeating the MRGP and DEP, an InN/InGaN periodic structure was successfully fabricated.
- 2011-04-25
著者
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Nanishi Yasushi
Department Of Photonics Faculty Of Science And Engineering Ritsumeikan University
-
Araki Tsutomu
Department Of Applied Physics Faculty Of Engineering Osaka University
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Yamaguchi Tomohiro
R-GIRO, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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Umeda Hidetomo
Department of Photonics, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan
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