Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-30

著者

• MARUYAMA Takahiro

  Department of Chemistry, Faculty of Science, Kyoto University

• AKIMOTO Katsuhiro

  Institute of Applied Physics, University of Tsukuba

• Akimoto Katsuhiro

  Institute Of Applied Physics University Of Tsukuba

• Maruyama Takahiro

  Department Of Photonics Ritsumeikan University

• Maruyama Takahiro

  Department Of Chemistry Faculty Of Science Kyoto University

• Kijima Satoru

  Sony Corporation Research Center

• NANISHI Yasushi

  Department of Photonics, Ritsumeikan University

• Nanishi Yasushi

  Department Of Photonics Ritsumeikan University

• Nanishi Yasushi

  Department Of Photonics Faculty Of Science And Engineering Ritsumeikan University

• HAGIO Yoshinori

  Institute of Applied Physics, University of Tsukuba

• SUGAHARA Hideo

  Institute of Applied Physics, University of Tsukuba

• MIYAJIMA Takao

  Sony Corporation Research Center

• Sugahara Hideo

  Institute Of Applied Physics University Of Tsukuba

• Hagio Yoshinori

  Institute Of Applied Physics University Of Tsukuba

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