Effect of Surface Structure on Transformation of 4H-SiC by High-Temperature Annealing
スポンサーリンク
概要
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The transformation of SiC etching shapes by high-temperature annealing has been investigated. Without silicon atoms on the surface, transformation of the etching shapes hardly occurred even after annealing in pure Ar at 1700 °C, where transformation should occur without the loss of silicon atoms. When SiH4 was added to Ar, the surface tended to revert to SiC, and the transformation was enhanced with increasing SiH4 addition. Therefore, the presence of silicon atoms is necessary to transform the etching shapes on SiC surfaces.
- 2010-10-25
著者
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Akimoto Katsuhiro
Institute Of Applied Physics University Of Tsukuba
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Nakamura Shun-ichi
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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Kawada Yasuyuki
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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Tawara Takeshi
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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Gotoh Masahide
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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Tawara Tae
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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Iwamuro Noriyuki
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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Tawara Tae
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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Tawara Takeshi
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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Gotoh Masahide
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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Iwamuro Noriyuki
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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Kawada Yasuyuki
Corporate R & D Headquarters, Fuji Electric Holdings Co., Ltd., Hino, Tokyo 191-8502, Japan
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