Photoluminescence of Undoped GaN Grown on c-Plane Al_2O_3 by Electron Cyclotron Resonance Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-12-01
著者
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Maruyama Takahiro
Institute Of Materials Science University Of Tsukuba
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AKIMOTO Katsuhiro
Institute of Applied Physics, University of Tsukuba
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CHO Sung
Institute of Materials Science, University of Tsukuba
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Akimoto Katsuhiro
Institute Of Applied Physics University Of Tsukuba
-
Cho Sung
Institute Of Materials Science University Of Tsukuba
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Maruyama Takahiro
Institute Of Applied Physics University Of Tsukuba
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MARUYAMA Takahiro
Institute of Materials Science, University of Tsukuba
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- Extended X-Ray Absorption Fine Structure Study of ZnSSe and ZnMgSSe
- Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy
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