Structure Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing Wave Method

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1983-12-20

著者

• Ishikawa T

  Riken Harima Institute

• ISHIKAWA Tetsuya

  Photon Factory, National Laboratory for High Energy Physics

• KIKUTA Seishi

  Department of Applied Physics, Faculty of Engineering, University of Tokyo

• Kawado Seiji

  Environment & Analysis Technology Department Technical Support Center Sony Corporation

• Kikuta Seishi

  Department Of Applied Physics Faculty Of Engineering The University Of Tokyo

• Kikuta Seishi

  Institute For Solid State Physics University Of Tokyo

• AKIMOTO Katsuhiro

  Institute of Applied Physics, University of Tsukuba

• Ishikawa T

  National Space Dev. Agency Of Japan Ibaraki Jpn

• Akimoto Koichi

  Department of Applied Physics, Faculty of Engineering, University of Tokyo

• Takahashi Toshio

  Department of Applied Physics, Faculty of Engineering, University of Tokyo

• Kikuta Seishi

  Department Of Applied Physics Faculty Of Engieering University Of Tokyo

• Ishikawa Tetsuya

  Riken Harima Institute

• Takahashi Tetsuo

  National Institute Of Advanced Industrial Science And Technology Power Electronics Research Center

• Taguchi Tomohiro

  Department Of Organic Materials Tokyo Institute Of Technology

• Ishikawa Tomonori

  Fujitsu Limited

• Ishikawa Takatoshi

  Department Of Applied Physics Faculty Of Science Fukuoka University

• Akimoto K

  Institute Of Applied Physics University Of Tsukuba

• Takahashi T

  Japan Advanced Institute Of Science And Technology

• Kikuta S

  Univ. Tokyo Tokyo

• Ishikawa Tetsuya

  Photon Factory National Laboratory For High Energy Physics

• Takahashi Toshio

  Department Of Applied Physics Faculty Of Engineering University Of Tokyo

関連論文

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• X-Ray Topography under Conditions of Monochromatic Spherical Wave Diffraction
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• Effect of Impurities on the Diffraction Curves of X-Rays from Dislocation-Free Silicon Crystals

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