Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
スポンサーリンク
概要
- 論文の詳細を見る
We propose a new material, ZnMgSSe, as the cladding layer of a blue-light laser diode. Band-gap energy can be varied from 2.8 to near 4 eV, maintaining lattice-matching to a (100) GaAs substrate. The hand-gap energies of MgS and MgSe (zincblende structure) are estimated to be about 4.5 eV and 3.6 eV, and the lattice constants are 5.62Å and 5.89Å, respectively. The refractive index of ZnMgSSe lattice-matched to GaAs is smaller than that of ZnSSe lattice-matched to GaAs. ZnMgSSe meets the requirements of the cladding layer of ZnSSe for fabricating the blue-light laser diode.
- 社団法人応用物理学会の論文
- 1991-09-15
著者
-
Nakano Kazushi
Sony Corporation Research Center
-
AKIMOTO Katsuhiro
Institute of Applied Physics, University of Tsukuba
-
Akimoto Katsuhiro
Sony Corporation Research Center
-
OKUYAMA Hiroyuki
Sony Corporation Research Center
-
Akimoto K
Institute Of Applied Physics University Of Tsukuba
-
Miyajima T
Sony Corp. Res. Center Kanagawa Jpn
-
MIYAJIMA Takao
Sony Corporation Research Center
-
Okuyama H
Sony Corporation Research Center
関連論文
- Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments
- Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface
- Interfacial Superstructure of AIN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces and Films
- Red Emission from Eu-Doped GaN Studied by Photoluminescence and Photo-Calorimetric Spectroscopy
- Nitrogen Doping into Cu_2O Thin Films Deposited by Reactive Radio-Frequency Magnetron Sputtering
- Nitrogen Doping into Cu_2O Thin Films Deposited by Reactive Sputtering Method
- Thin-Film Deposition of Cu_2O by Reactive Radio-Frequency Magnetron Sputtering
- Extended X-Ray Absorption Fine Structure Study of ZnSSe and ZnMgSSe
- Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy
- Photoluminescence of Undoped GaN Grown on c-Plane Al_2O_3 by Electron Cyclotron Resonance Molecular Beam Epitaxy
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- Structure Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing Wave Method
- Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
- Structural Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing-Wave Method
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- RT Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
- AlGaInP Visible Semiconductor Lasers : COMPONENTS
- Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy
- Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
- Photopumped Blue Lasers with ZnSSe-ZnMgSSe Double Heterostructure and Attempt at Doping in ZnMgSSe
- Ti/Pt/Au Ohmic Contacts to n-Type ZnSe
- Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
- Optically Pumped Blue Lasing in ZnSe-ZnMgSSe Double Heterostructures at Room Temperature
- Plasma Doping of Nitrogen in ZnSe Using Electron Cyclotron Resonance
- Photoluminescence Spectra of Silver-Doped ZnSe Grown by MBE
- Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy
- Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation
- Characterization of ZnMgSSe-Based Wide-Gap Laser Diodes
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes