Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1996-05-15
著者
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Maruyama Takahiro
Institute Of Materials Science University Of Tsukuba
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AKIMOTO Katsuhiro
Institute of Applied Physics, University of Tsukuba
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CHO Sung
Institute of Materials Science, University of Tsukuba
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TANAKA Uitsu
Institute of Materials Science, University of Tsukuba
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HATA Kazutaka
Institute of Materials Science, University of Tsukuba
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Akimoto Katsuhiro
Institute Of Applied Physics University Of Tsukuba
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Tanaka Uitsu
Institute Of Materials Science University Of Tsukuba
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Cho Sung
Institute Of Materials Science University Of Tsukuba
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Maruyama Takahiro
Institute Of Applied Physics University Of Tsukuba
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Hata Kazutaka
Institute Of Materials Science University Of Tsukuba
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