Photopumped Blue Lasers with ZnSSe-ZnMgSSe Double Heterostructure and Attempt at Doping in ZnMgSSe
スポンサーリンク
概要
- 論文の詳細を見る
We observed the lasing operation of ZnSSe-ZnMgSSe double heterostructure (DH) photopumped blue lasers up to 500 K. The wavelength at room temperature (RT) and threshold intensity at 300 K were 464.5 nm and 105 kW/cm^2, respectively. Characteristic temperature (T_0) was estimated to be 170 K. These results indicate that this structure has good thermal stability. Both n-type and p-type doping in ZnMgSSe were successfully performed. Both n-type and p-type ZnMgSSe show good properties for fabricating laser diodes.
- 社団法人応用物理学会の論文
- 1993-01-30
著者
-
AKIMOTO Katsuhiro
Institute of Applied Physics, University of Tsukuba
-
Akimoto Katsuhiro
Sony Corporation Research Center
-
OKUYAMA Hiroyuki
Sony Corporation Research Center
-
Akimoto K
Institute Of Applied Physics University Of Tsukuba
-
Okuyama H
Sony Corporation Research Center
-
MORINAGA Yuko
Sony Corporation Research Center
関連論文
- Control of the Electrical Properties of AlN/thin-a-Si/GaAs MIS Diodes by GaAs Surface Pretreatments
- Effects of InP Surface Treatment on the Electrical Properties and Structures of AlN/n-InP Interface
- Interfacial Superstructure of AIN/n-GaAs(001) System Fabricated by Metalorganic Chemical Vapor Deposition : Surfaces, Interfaces and Films
- Red Emission from Eu-Doped GaN Studied by Photoluminescence and Photo-Calorimetric Spectroscopy
- Nitrogen Doping into Cu_2O Thin Films Deposited by Reactive Radio-Frequency Magnetron Sputtering
- Nitrogen Doping into Cu_2O Thin Films Deposited by Reactive Sputtering Method
- Thin-Film Deposition of Cu_2O by Reactive Radio-Frequency Magnetron Sputtering
- Extended X-Ray Absorption Fine Structure Study of ZnSSe and ZnMgSSe
- Photoluminescence Properties of GaN Grown under Ion Flux Reduced Condition by Plasma Enhanced Molecular Beam Epitaxy
- Photoluminescence of Undoped GaN Grown on c-Plane Al_2O_3 by Electron Cyclotron Resonance Molecular Beam Epitaxy
- X-Ray Standing Wave Method Applied to the Characterization of InGaAsP Alloy Semiconductor Thin Film
- Structure Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing Wave Method
- Synchrotron Plane Wave X-Ray Topography of 6 inch Diameter Si Crystal
- Structural Analysis of the NiSi_2/(111)Si Interface by the X-Ray Standing-Wave Method
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- RT Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes
- ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- ZnCdSe/ZnSe/ZnMgSSe Separate-Confinement Heterostructure Laser Diode with Various Cd Mole Fractions
- 491-nm ZnCeSe/ZnSe/ZnMgSSe SCH Laser Diode with a Low Operating Voltage
- Interface Properties between Ni and p-GaN Studied by Photoemission Spectroscopy
- Epitaxial Growth of GaN on Sapphire (0001) Substrates by Electron Cyclotron Resonance Molecular Beam Epitaxy
- Photopumped Blue Lasers with ZnSSe-ZnMgSSe Double Heterostructure and Attempt at Doping in ZnMgSSe
- Ti/Pt/Au Ohmic Contacts to n-Type ZnSe
- Epitaxial Growth of ZnMgSSe on GaAs Substrate by Molecular Beam Epitaxy
- Optically Pumped Blue Lasing in ZnSe-ZnMgSSe Double Heterostructures at Room Temperature
- Plasma Doping of Nitrogen in ZnSe Using Electron Cyclotron Resonance
- Photoluminescence Spectra of Silver-Doped ZnSe Grown by MBE
- Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy
- Electroluminescence from a ZnSe p-n Junction Fabricated by Nitrogen-Ion Implantation
- Room-Temperature Operation of ZnSe-Active-Layer and ZnCdSe-Active-Layer Laser Diodes