Metalorganic Chemical Vapor Phase Epitaxy of Crack-Free GaN on Si(111) Exceeding 1 μm in Thickness
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概要
- 論文の詳細を見る
We present a simple method for the elimination of cracks in GaN layers grown on Si(111). Cracking of GaN on Si usually occurs due to large lattice and thermal mismatch of GaN and Si when layer thicknesses exceeds approximately 1 μm. By introducing thin, low-temperature AlN interlayers, we could significantly reduce the crack density of the GaN layer. The crack density is practically reduced to zero from an original crack density of 240 mm^<-2> corresponding to crack-free regions of 3 × 10^<-3> mm^2. Additionally for the GaN layer with low temperature interlayers, the full width at half maximum X-ray (202^^-4) rocking curve is improved from approximately 270 to 65 arcsec.
- 社団法人応用物理学会の論文
- 2000-11-15
著者
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Diez Annette
Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics
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Kosogov A
Max-planck-institut Fur Mikrostrukturphysik
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Krost A
Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics
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Krost Alois
Institut Fur Festkorperphysik Tu-berlin
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Dadgar Armin
Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics
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Dadgar Armin
Institut Fur Festkorperphysik Technische Universitat Berlin
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BLASING Jurgen
Institut fur Experimentelle Physik, Otto-von-Guericke Universitat
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Blaesing J
Otto-von-guericke-university Magdeburg Faculty Of Natural Sciences Institut Of Experimental Physics
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DIEZ Annette
Institut fur Experimentelle Physik, Otto-von-Guericke Universitat Magdeburg
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ALAM Assadullah
AIXTRON AG
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HEUKEN Michael
AIXTRON AG
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Diez Anoette
Institut fur Experimentelle Physik, Otto-von-Guericke Universitat Magdeburg
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Dadgar Armin
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
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Krost Alois
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, Universitätsplatz 2, 39106 Magdeburg, Germany
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