Impact of AlN Spacer on Metal--Semiconductor--Metal Pt--InAlGaN/GaN Heterostructures for Ultraviolet Detection
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概要
- 論文の詳細を見る
We report on metal--semiconductor--metal (MSM) photodetectors (PDs) fabricated on InAlGaN/GaN two-dimensional electron gas (2DEG) heterostructures. Electrical and photodetection properties were compared in two structures with and without an AlN spacer between the barrier (InAlGaN) and the GaN. The presence of the spacer hugely reduces the leakage current, allowing biasing at higher voltages. In photodetection, gain is obtained in both structures at a high bias. The photocurrent transient behavior revealed a faster response for excitation energy close to the GaN band edge than for energy above the barrier band edge. The fabrication and improvement of this type of device can lead to integration with the already mature high-electron-mobility transistor (HEMT) technology.
- 2013-08-25
著者
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ROMERO Maria
Departments of Marine Pathology
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Calle Fernando
Departamento de Ingeniería Electrónica and Instituto de Sistemas Optoelectrónicos y Microtecnología, ETSI Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
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Goldhahn Rüdiger
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany
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Feneberg Martin
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany
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Cavallini Anna
Department of Physics, University of Bologna, Bologna-40127, Italy
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Bokov Pavel
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany
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Pandey Saurabh
Department of Physics, University of Bologna, Bologna-40127, Italy
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Brazzini Tommaso
Departamento de Ingeniería Electrónica and Instituto de Sistemas Optoelectrónicos y Microtecnología, ETSI Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
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Tabares Gema
Departamento de Ingeniería Electrónica and Instituto de Sistemas Optoelectrónicos y Microtecnología, ETSI Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
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Romero Maria
Departamento de Ingeniería Electrónica and Instituto de Sistemas Optoelectrónicos y Microtecnología, ETSI Telecomunicación, Universidad Politécnica de Madrid, 28040 Madrid, Spain
関連論文
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- Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces
- Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer
- Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
- Impact of AlN Spacer on Metal--Semiconductor--Metal Pt--InAlGaN/GaN Heterostructures for Ultraviolet Detection
- Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection (Special Issue : Recent Advances in Nitride Semiconductors)
- Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer (Special Issue : Recent Advances in Nitride Semiconductors)
- Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content (Special Issue : Recent Advances in Nitride Semiconductors)