Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer (Special Issue : Recent Advances in Nitride Semiconductors)
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概要
著者
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Klein Oliver
Central Facility of Electron Microscopy, Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany
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Klein Martin
Institute of Optoelectronics, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany
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Kaiser Ute
Central Facility of Electron Microscopy, Ulm University, Albert-Einstein-Allee 11, 89081 Ulm, Germany
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Neuschl Benjamin
Institute of Quantum Matter, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany
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Tischer Ingo
Institute of Quantum Matter, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany
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Lazarev Sergey
ANKA, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
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Bauer Sondes
ANKA, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
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Baumbach Tilo
ANKA, Karlsruhe Institute of Technology (KIT), 76344 Eggenstein-Leopoldshafen, Germany
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Feneberg Martin
Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany
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Scholz Ferdinand
Institut für Optoelektronik, Universität Ulm, 89069 Ulm, Germany
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Thonke Klaus
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm, Germany
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Tischer Ingo
Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm, Germany
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Forghani Kamran
Institut für Optoelektronik, Universität Ulm, 89069 Ulm, Germany
関連論文
- Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces
- AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency
- Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer
- Optical Properties of ZnO/GaN/InGaN Core--Shell Nanorods
- High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
- Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
- Impact of AlN Spacer on Metal--Semiconductor--Metal Pt--InAlGaN/GaN Heterostructures for Ultraviolet Detection
- Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection (Special Issue : Recent Advances in Nitride Semiconductors)
- Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer (Special Issue : Recent Advances in Nitride Semiconductors)
- Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content (Special Issue : Recent Advances in Nitride Semiconductors)