Optical Properties of ZnO/GaN/InGaN Core--Shell Nanorods

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概要

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• Upright ZnO/GaN/InGaN core--shell nanorods arrayed in a well defined pattern are very good candidates for sensing applications. In our approach, we grew single ZnO nanopillars on top of ordered GaN pyramids, which were subsequently overgrown with GaN and a single InGaN quantum well, followed by a final GaN barrier layer. Spatially and spectrally resolved low temperature cathodoluminescence was used to investigate the optical properties of the rods. We found the dominant quantum well luminescence to be well defined and homogeneously distributed, with a maximum intensity at the edges of the pillars. Although the hydrogen atmosphere during the nitride growth together with the elevated growth temperature should lead to complete desorption of the initial ZnO pillar template, we found evidence for ZnO relicts on the pillar surface, and for incorporation of Zn in GaN at the tips of the rods. Furthermore, we were able to distinguish between the luminescence contributions from the quantum well, Zn-doped GaN, and possible structural defects.

• 2013-07-25

著者

• Thonke Klaus

  Institute of Semiconductor Physics, Ulm University, 89069 Ulm, Germany

• Tischer Ingo

  Institute of Quantum Matter, Ulm University, Albert-Einstein-Allee 45, 89081 Ulm, Germany

• Scholz Ferdinand

  Institut für Optoelektronik, Universität Ulm, 89069 Ulm, Germany

• Hocker Matthias

  Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm, Germany

• Fikry Mohamed

  Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm, Germany

• Madel Manfred

  Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm, Germany

• Schied Monika

  Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm, Germany

• Ren Zhe

  Institute of Optoelectronics, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm, Germany

• Thonke Klaus

  Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm, Germany

• Tischer Ingo

  Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm, Germany

関連論文

• Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces
• AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency
• Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer
• Optical Properties of ZnO/GaN/InGaN Core--Shell Nanorods
• High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
• Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer (Special Issue : Recent Advances in Nitride Semiconductors)

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