Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces

スポンサーリンク

概要

• 論文の詳細を見る

• We investigate the properties of semipolar InGaN/GaN quantum wells (QWs) emitting in the blue and green spectral region. A single QW is grown on inverse V-shaped GaN pyramids which are formed by selective area epitaxy on a template masked with different hexagonally ordered patterns. Using photo- and locally resolved cathodoluminescence measurements the high material quality of the semipolar planes could be confirmed (full width at half maximum (FWHM) of D0X: 2.6 meV). Furthermore, it was found that the InGaN QW emission wavelength within one pyramid depends on the facet type as well as on the position along the facet.

• 2009-06-25

著者

• Scholz Ferdinand

  Institut Fur Optoelektronik Universitat Ulm

• Wunderer Thomas

  Institute of Optoelectronics, Ulm University, 89069 Ulm, Germany

• Scholz Ferdinand

  Institute of Optoelectronics, Ulm University, 89069 Ulm, Germany

• Lipski Frank

  Institute of Optoelectronics, Ulm University, 89069 Ulm, Germany

• Schwaiger Stephan

  Institute of Optoelectronics, Ulm University, 89069 Ulm, Germany

• Hertkorn Joachim

  Institute of Optoelectronics, Ulm University, 89069 Ulm, Germany

• Wiedenmann Michael

  Institute of Semiconductor Physics, Ulm University, 89069 Ulm, Germany

• Feneberg Martin

  Institute of Semiconductor Physics, Ulm University, 89069 Ulm, Germany

• Thonke Klaus

  Institute of Semiconductor Physics, Ulm University, 89069 Ulm, Germany

• Feneberg Martin

  Institut für Experimentelle Physik, Otto-von-Guericke-Universität Magdeburg, 39106 Magdeburg, Germany

• Scholz Ferdinand

  Institut für Optoelektronik, Universität Ulm, 89069 Ulm, Germany

• Thonke Klaus

  Institute of Quantum Matter, Semiconductor Physics Group, University of Ulm, Albert-Einstein-Allee 45, D-89069 Ulm, Germany

関連論文

• Properties of Blue and Green InGaN/GaN Quantum Well Emission on Structured Semipolar Surfaces
• AlGaN-Based 355nm UV Light-Emitting Diodes with High Power Efficiency
• Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer
• Optical Properties of ZnO/GaN/InGaN Core--Shell Nanorods
• High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes
• Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content
• Impact of AlN Spacer on Metal--Semiconductor--Metal Pt--InAlGaN/GaN Heterostructures for Ultraviolet Detection
• Impact of AlN Spacer on Metal-Semiconductor-Metal Pt-InAlGaN/GaN Heterostructures for Ultraviolet Detection (Special Issue : Recent Advances in Nitride Semiconductors)
• Studies on Defect Reduction in AlGaN Heterostructures by Integrating an In-situ SiN Interlayer (Special Issue : Recent Advances in Nitride Semiconductors)
• Systematic Optical Characterization of Two-Dimensional Electron Gases in InAlN/GaN-Based Heterostructures with Different In Content (Special Issue : Recent Advances in Nitride Semiconductors)

スポンサーリンク