High Power Efficiency AlGaN-Based Ultraviolet Light-Emitting Diodes

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概要

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• High-efficiency AlGaN-based 355 nm UV light-emitting diodes (LEDs) grown on low-dislocation-density AlGaN/sapphire templates with an output power of 9.8 mW (22.7 mW) at a DC current of 40 mA (100 mA) are reported. The corresponding maximum external quantum efficiency and maximum power efficiency are 7.2 and 6.5%, respectively. Based on a rate equation model, a method is presented to derive the extraction as well as the injection and internal quantum efficiency as a function of the driving current. The thus obtained injection and internal quantum efficiencies amount to 51 and 47% at 40 mA, the extraction efficiency to 29%.

• 2013-08-25

著者

• Kohler Klaus

  Fraunhofe-institut Fur Angewandte Festkorperphysik

• Gutt Richard

  Fraunhofer-institut Fur Angewandte Festkorperphysik

• PASSOW Thorsten

  Fraunhofer-Institut fur Angewandte Festkorperphysik

• KUNZER Michael

  Fraunhofer-Institut fur Angewandte Festkorperphysik

• KIRSTE Lutz

  Fraunhofer-Institut fur Angewandte Festkorperphysik

• Forghani Kamran

  Institut Fur Optoelektronik Universitat Ulm

• Pletschen Wilfried

  Fraunhofer Institute for Applied Solid-State Physics (IAF), Tullastrasse 72, 79108 Freiburg, Germany

• Scholz Ferdinand

  Institut für Optoelektronik, Universität Ulm, 89069 Ulm, Germany

• Wagner Joachim

  Fraunhofer-Institut für Angewandte Festkörperphysik, Tullastrasse 72, 79108 Freiburg, Germany

• Pletschen Wilfried

  Fraunhofer-Institut für Angewandte Festkörperphysik, 79108 Freiburg, Germany

• Köhler Klaus

  Fraunhofer-Institut für Angewandte Festkörperphysik, 79108 Freiburg, Germany

• Wagner Joachim

  Fraunhofer-Institut für Angewandte Festkörperphysik, 79108 Freiburg, Germany

• Wagner Joachim

  Fraunhofer Institute for Applied Solid State Physics IAF, Tullastrasse 72, D-79108 Freiburg, Germany

• Forghani Kamran

  Institut für Optoelektronik, Universität Ulm, 89069 Ulm, Germany

• Kirste Lutz

  Fraunhofer-Institut für Angewandte Festkörperphysik, 79108 Freiburg, Germany

• WAGNER Joachim

  Fraunhofer Institute for Applied Solid State Physics IAF

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