Local Stress Analysis of Epitaxial Laterally-Overgrown GaN
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2000-10-01
著者
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Christen Jurgen
Institute Of Experimental Physics Otto-von-guericke University
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Christen Jurgen
Institut Fur Experimentelle Physik Otto-von-guericke-universitat Magdeburg
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HOFFMANN Axel
Institut fur Festkorperphysik der TU Berlin
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KASCHNER Axel
Institut fur Festkorperphysik der TU Berlin
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Thomsen Christian
Institut Fur Festkorperphysik Technische Universitat
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Kaschner Axel
Institut Fur Festkorperphysik Technische Universitat
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Hoffmann Axel
Institut Fur Festkorperphysik Technische Universitat
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LIU Quincy
Abteilung Theoretische Physik, Hahn-Meitner-Institut
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VEIT Peter
Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg
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CLOS Rainer
Institut fur Experimentelle Physik, Otto-von-Guericke-Universitat Magdeburg
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Christen Jurgen
Institut Fur Experimentelle Physik Otto-von-guericke Universitat
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Veit Peter
Institut Fur Experimentelle Physik Otto-von-guericke-universitat Magdeburg
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Liu Quincy
Abteilung Theoretische Physik Hahn-meitner-institut
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Clos Rainer
Institut Fur Experimentelle Physik Otto-von-guericke-universitat Magdeburg
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Hoffmann Axel
Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, 10623 Berlin, Germany
関連論文
- Spatially Resolved Imaging of the Spectral Emission Characteristic of an InGaN/GaN-Multi Quantum Well-Light-Emitting Diode by Scanning Electroluminescence Microscopy
- Spatially Resolved Imaging of the Spectral Emission Characteristic of InGaN-MQW-LEDs by Scanning Electroluminescence Microscopy
- Crystalline and Optical Properties of ELO GaN by HVPE Using Tungsten Mask(Special Issue on Blue Laser Diodes and Related Devices/Technologies)
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- Strain Modification of GaN in AlGaN/GaN Epitaxial Films
- Local Stress Analysis of Epitaxial Laterally-Overgrown GaN
- Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates
- Stress Relaxation in Low-Strain AlInN/GaN Bragg Mirrors
- Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine
- On the Origin of the Unexpected Annealing Behavior of GaInNAs Quantum Wells
- Non-planar Selective Area Growth and Characterization of GaN and AlGaN
- Direct Evidence of Nanoscale Carrier Localization in InGaN/GaN Structures Grown on Si Substrates